Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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SUF30J-E3/73
RFQ
VIEW
RFQ
826
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 3A P600 - Obsolete Tape & Box (TB) Through Hole P600, Axial P600 Standard 3A 2V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
SUF30G-E3/73
RFQ
VIEW
RFQ
1,697
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 3A P600 - Obsolete Tape & Box (TB) Through Hole P600, Axial P600 Standard 3A 1.8V @ 3A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,086
In-stock
Comchip Technology DIODE GEN PURP 1KV 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
877
In-stock
Comchip Technology DIODE GEN PURP 800V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,252
In-stock
Comchip Technology DIODE GEN PURP 600V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
3,472
In-stock
Comchip Technology DIODE GEN PURP 400V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,112
In-stock
Comchip Technology DIODE GEN PURP 300V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,207
In-stock
Comchip Technology DIODE GEN PURP 200V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
958
In-stock
Comchip Technology DIODE GEN PURP 100V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,209
In-stock
Comchip Technology DIODE GEN PURP 50V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,386
In-stock
Comchip Technology DIODE GEN PURP 1KV 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,466
In-stock
Comchip Technology DIODE GEN PURP 800V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
SF38GHA0G
RFQ
VIEW
RFQ
2,248
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF37GHA0G
RFQ
VIEW
RFQ
3,433
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF36GHA0G
RFQ
VIEW
RFQ
2,997
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF35GHA0G
RFQ
VIEW
RFQ
3,835
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF34GHA0G
RFQ
VIEW
RFQ
3,764
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF33GHA0G
RFQ
VIEW
RFQ
3,666
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32GHA0G
RFQ
VIEW
RFQ
670
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF31GHA0G
RFQ
VIEW
RFQ
2,296
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF37G A0G
RFQ
VIEW
RFQ
1,380
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF35G A0G
RFQ
VIEW
RFQ
3,943
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SF33G A0G
RFQ
VIEW
RFQ
1,201
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF32G A0G
RFQ
VIEW
RFQ
2,959
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
HER307G A0G
RFQ
VIEW
RFQ
898
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER306G A0G
RFQ
VIEW
RFQ
3,378
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.7V @ 3A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 35pF @ 4V, 1MHz
HER304G A0G
RFQ
VIEW
RFQ
2,272
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 60pF @ 4V, 1MHz
BY251P-E3/73
RFQ
VIEW
RFQ
1,505
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Small Signal =< 200mA (Io), Any Speed 3µs -55°C ~ 150°C 40pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,384
In-stock
Comchip Technology DIODE GEN PURP 600V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,424
In-stock
Comchip Technology DIODE GEN PURP 400V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -