- Series :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
826
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 3A | 2V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,252
In-stock
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Comchip Technology | DIODE GEN PURP 600V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.3V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | - | |||
|
VIEW |
2,248
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,378
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
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|
VIEW |
2,384
In-stock
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Comchip Technology | DIODE GEN PURP 600V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.3V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,764
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
3,709
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
|
VIEW |
1,821
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 3A | 1.1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 27pF @ 4V, 1MHz | |||
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|
VIEW |
3,700
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | |||
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|
VIEW |
911
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
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|
VIEW |
2,802
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 3A | 1.1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 27pF @ 4V, 1MHz | |||
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|
VIEW |
3,534
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,598
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 25pF @ 4V, 1MHz | |||
