Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
1,207
In-stock
Comchip Technology DIODE GEN PURP 200V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
SF34GHA0G
RFQ
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RFQ
3,764
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
BY251P-E3/73
RFQ
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RFQ
1,505
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.1V @ 3A 5µA @ 200V 200V Small Signal =< 200mA (Io), Any Speed 3µs -55°C ~ 150°C 40pF @ 4V, 1MHz
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RFQ
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RFQ
2,256
In-stock
Comchip Technology DIODE GEN PURP 200V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
FR303G A0G
RFQ
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RFQ
2,082
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1.3V @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 150ns -55°C ~ 150°C 30pF @ 4V, 1MHz
1N5402GHA0G
RFQ
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RFQ
1,789
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
1N5402G A0G
RFQ
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RFQ
2,320
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 1V @ 3A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 150°C 25pF @ 4V, 1MHz
SF34G A0G
RFQ
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RFQ
1,084
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 3A 950mV @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz