- Series :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
-
- 100µA @ 100V (2)
- 100µA @ 150V (2)
- 100µA @ 200V (2)
- 100µA @ 90V (2)
- 10µA @ 1000V (2)
- 10µA @ 100V (2)
- 10µA @ 200V (2)
- 10µA @ 300V (2)
- 10µA @ 400V (2)
- 10µA @ 500V (1)
- 10µA @ 50V (2)
- 10µA @ 600V (2)
- 10µA @ 800V (2)
- 1mA @ 200V (1)
- 500µA @ 40V (1)
- 500µA @ 50V (2)
- 500µA @ 60V (2)
- 5µA @ 1000V (4)
- 5µA @ 100V (5)
- 5µA @ 1300V (1)
- 5µA @ 150V (2)
- 5µA @ 200V (6)
- 5µA @ 300V (2)
- 5µA @ 400V (5)
- 5µA @ 500V (2)
- 5µA @ 50V (6)
- 5µA @ 600V (6)
- 5µA @ 800V (4)
- Applied Filters :
74 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,248
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,433
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,997
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,835
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,764
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
3,666
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
670
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,296
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
1,380
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
3,943
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,201
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
2,959
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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|
VIEW |
898
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
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|
VIEW |
3,378
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
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|
VIEW |
2,272
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
VIEW |
1,505
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 200V | 200V | Small Signal =< 200mA (Io), Any Speed | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
2,411
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
2,597
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
3,364
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
3,103
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
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|
VIEW |
3,112
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 500V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
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|
VIEW |
2,200
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 700mV @ 3A | 500µA @ 50V | 50V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
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|
VIEW |
2,091
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
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|
VIEW |
2,899
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 800V | 800V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
1,764
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
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|
VIEW |
2,268
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
777
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
1,832
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,427
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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|
VIEW |
2,661
In-stock
|
Taiwan Semiconductor Corporation | DIODE SCHOTTKY 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Schottky | 3A | 950mV @ 3A | 100µA @ 200V | 200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 150°C | - | |||
