- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
-
- 10A (3)
- 10A (DC) (5)
- 12A (1)
- 12A (DC) (3)
- 13A (DC) (1)
- 15A (4)
- 15A (DC) (2)
- 16A (DC) (2)
- 17A (1)
- 20A (1)
- 20A (DC) (2)
- 24A (DC) (1)
- 25A (DC) (1)
- 27A (DC) (1)
- 2A (DC) (1)
- 30A (DC) (1)
- 32A (1)
- 34A (DC) (1)
- 40A (1)
- 40A (DC) (1)
- 41A (DC) (1)
- 4A (2)
- 4A (DC) (2)
- 60A (DC) (2)
- 6A (3)
- 6A (DC) (3)
- 8.8A (DC) (1)
- 8A (5)
- 8A (DC) (5)
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.35V @ 10A (1)
- 1.35V @ 12A (1)
- 1.35V @ 16A (1)
- 1.35V @ 20A (1)
- 1.35V @ 4A (1)
- 1.35V @ 6A (1)
- 1.35V @ 8A (1)
- 1.55V @ 10A (2)
- 1.55V @ 12A (1)
- 1.55V @ 15A (1)
- 1.55V @ 20A (1)
- 1.55V @ 6A (1)
- 1.55V @ 8A (1)
- 1.5V @ 10A (1)
- 1.5V @ 2A (1)
- 1.5V @ 4A (1)
- 1.5V @ 6A (1)
- 1.5V @ 8A (1)
- 1.75V @ 10A (2)
- 1.75V @ 12A (2)
- 1.75V @ 16A (1)
- 1.75V @ 20A (1)
- 1.75V @ 30A (1)
- 1.75V @ 4A (1)
- 1.75V @ 6A (2)
- 1.75V @ 8A (2)
- 1.7V @ 10A (3)
- 1.7V @ 12A (1)
- 1.7V @ 15A (1)
- 1.7V @ 20A (1)
- 1.7V @ 30A (1)
- 1.7V @ 4A (2)
- 1.7V @ 6A (3)
- 1.7V @ 8A (5)
- 1.85V @ 10A (1)
- 1.8V @ 10A (1)
- 1.8V @ 20A (1)
- 2.2V @ 15A (1)
- 2.2V @ 20A (1)
- 2.2V @ 30A (1)
- 2.3V @ 15A (1)
- 2.3V @ 3A (1)
- 2.3V @ 40A (1)
- 2.3V @ 8A (1)
- Current - Reverse Leakage @ Vr :
-
- 10.8µA @ 650V (1)
- 100µA @ 650V (2)
- 120µA @ 600V (1)
- 120µA @ 650V (1)
- 14µA @ 420V (1)
- 160µA @ 600V (1)
- 170µA @ 650V (2)
- 200µA @ 600V (2)
- 200µA @ 650V (10)
- 20µA @ 420V (1)
- 20µA @ 650V (1)
- 230µA @ 650V (3)
- 240µA @ 600V (1)
- 250µA @ 650V (2)
- 27µA @ 420V (1)
- 300µA @ 600V (1)
- 30µA @ 650V (1)
- 33µA @ 420V (1)
- 400µA @ 600V (1)
- 400µA @ 650V (1)
- 40µA @ 420V (1)
- 40µA @ 650V (12)
- 500µA @ 650V (1)
- 50µA @ 650V (1)
- 53µA @ 420V (1)
- 60µA @ 650V (1)
- 67µA @ 420V (1)
- 80µA @ 650V (1)
- 90µA @ 170V (1)
- 90µA @ 650V (3)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 1085pF @ 1V, 100kHz (1)
- 110pF @ 1V, 1MHz (1)
- 125pF @ 1V, 1MHz (1)
- 130pF @ 1V, 1MHz (1)
- 1705pF @ 1V, 100kHz (1)
- 179pF @ 1V, 1MHz (1)
- 190pF @ 1V, 1MHz (1)
- 200pF @ 0V, 1MHz (1)
- 200pF @ 1V, 1MHz (1)
- 205pF @ 1V, 1MHz (1)
- 219pF @ 1V, 1MHz (1)
- 250pF @ 1V, 1MHz (1)
- 260pF @ 1V, 1MHz (2)
- 290pF @ 1V, 1MHz (1)
- 291pF @ 1V, 1MHz (1)
- 300pF @ 0V, 1MHz (1)
- 300pF @ 1V, 1MHz (3)
- 302pF @ 1V, 1MHz (1)
- 35pF @ 650V, 1MHz (1)
- 361pF @ 1V, 100kHz (1)
- 365pF @ 1V, 1MHz (2)
- 400pF @ 1V, 1MHz (1)
- 401pF @ 1V, 1MHz (1)
- 414pF @ 0V, 1MHz (1)
- 438pF @ 1V, 1MHz (1)
- 44pF @ 650V, 1MHz (1)
- 463pF @ 1V, 100kHz (1)
- 480pF @ 0V, 1MHz (1)
- 495pF @ 1V, 1MHz (1)
- 500pF @ 1V, 1MHz (1)
- 550pF @ 1V, 1MHz (1)
- 560pF @ 0V, 1MHz (1)
- 575pF @ 1V, 100kHz (1)
- 594pF @ 1V, 1MHz (1)
- 600pF @ 0V, 1MHz (1)
- 600pF @ 1V, 1MHz (1)
- 65pF @ 650V, 1MHz (1)
- 665pF @ 1V, 100kHz (1)
- 680pF @ 100mV, 1MHz (1)
- 730pF @ 1V, 1MHz (1)
- 783pF @ 1V, 1MHz (1)
- 887pF @ 1V, 100kHz (1)
- 970pF @ 1V, 1MHz (1)
- Applied Filters :
58 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||
|
VIEW |
3,362
In-stock
|
Microsemi Corporation | DIODE SILICON 650V 32A TO220 | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 32A | 1.8V @ 20A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 680pF @ 100mV, 1MHz | |||
|
VIEW |
2,827
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
|
VIEW |
3,496
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 650V 8A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.75V @ 8A | 80µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 414pF @ 0V, 1MHz | |||
|
VIEW |
2,409
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 10A TO220FM | Active | Tube | Through Hole | TO-220-2 | TO-220FM | Silicon Carbide Schottky | 10A (DC) | 1.55V @ 10A | 200µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 365pF @ 1V, 1MHz | |||
|
VIEW |
1,728
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 40A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 40A (DC) | 2.2V @ 20A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 32ns | -40°C ~ 175°C | - | |||
|
VIEW |
962
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 6A TO220-2L | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 35pF @ 650V, 1MHz | |||
|
VIEW |
625
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
|
VIEW |
2,034
In-stock
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | |||
|
VIEW |
3,203
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 12A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 665pF @ 1V, 100kHz | |||
|
|
VIEW |
1,457
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
|
|
VIEW |
3,035
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 13A (DC) | 1.75V @ 8A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 463pF @ 1V, 100kHz | |||
|
|
VIEW |
2,263
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 24A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 24A (DC) | 1.35V @ 10A | 33µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 495pF @ 1V, 1MHz | |||
|
|
VIEW |
2,062
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 20A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 20A (DC) | 1.35V @ 8A | 27µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 401pF @ 1V, 1MHz | |||
|
|
VIEW |
2,896
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8.8A (DC) | 1.75V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 361pF @ 1V, 100kHz | |||
|
|
VIEW |
1,484
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | |||
|
|
VIEW |
2,412
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | - | |||
|
|
VIEW |
1,876
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 1.7V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 80ns | -40°C ~ 175°C | - | |||
|
VIEW |
3,542
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.55V @ 8A | 160µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 291pF @ 1V, 1MHz | |||
|
|
VIEW |
3,731
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 25A (DC) | 1.75V @ 20A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
|
|
VIEW |
3,572
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16A (DC) | 1.75V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | |||
|
VIEW |
3,470
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 12A TO220-2L | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 90µA @ 170V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 65pF @ 650V, 1MHz | |||
|
|
VIEW |
2,892
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 650V 12A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Schottky | 12A | 1.75V @ 12A | 120µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
|
VIEW |
3,074
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 650V 10A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.75V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 480pF @ 0V, 1MHz | |||
|
|
VIEW |
3,219
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 650V 6A TO220AC | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 6A | 1.75V @ 6A | 60µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 300pF @ 0V, 1MHz | |||
|
|
VIEW |
3,681
In-stock
|
Rohm Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 8A (DC) | 1.5V @ 8A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 400pF @ 1V, 1MHz | |||
|
VIEW |
3,232
In-stock
|
Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 4A TO220 | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 125pF @ 1V, 1MHz | |||
|
|
VIEW |
2,581
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 2.2V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | |||
|
|
VIEW |
847
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 15A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 15A | 1.7V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 114ns | -40°C ~ 175°C | - | |||
|
|
VIEW |
2,383
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 2.3V @ 3A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 40ns | -40°C ~ 175°C | - | |||
|
VIEW |
1,967
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 10A TO220-2L | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - | |||
