Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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TRS8E65C,S1Q
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2,827
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Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 8A TO220-2L - Active Tube Through Hole TO-220-2 TO-220-2L Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 90µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 44pF @ 650V, 1MHz
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625
In-stock
Comchip Technology DIODE SILICON CARBIDE POWER SCHO - Active - Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 100µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 560pF @ 0V, 1MHz
NXPSC08650Q
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2,034
In-stock
WeEn Semiconductors DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 260pF @ 1V, 1MHz
IDP08E65D1XKSA1
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RFQ
1,876
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 1.7V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 80ns -40°C ~ 175°C -
LFUSCD08065A
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1,556
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Littelfuse Inc. DIODE SIC SCHOTTKY 650V 8A TO220 - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 260pF @ 1V, 1MHz