Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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TRS8E65C,S1Q
RFQ
VIEW
RFQ
2,827
In-stock
Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 8A TO220-2L - Active Tube Through Hole TO-220-2 TO-220-2L Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 90µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 44pF @ 650V, 1MHz
HERA807G C0G
RFQ
VIEW
RFQ
1,438
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 800V 800V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
HERA806G C0G
RFQ
VIEW
RFQ
2,746
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
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RFQ
VIEW
RFQ
625
In-stock
Comchip Technology DIODE SILICON CARBIDE POWER SCHO - Active - Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 100µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 560pF @ 0V, 1MHz
STPSC806D
RFQ
VIEW
RFQ
3,511
In-stock
STMicroelectronics DIODE SCHOTTKY 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 100µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 450pF @ 0V, 1MHz
NXPSC08650Q
RFQ
VIEW
RFQ
2,034
In-stock
WeEn Semiconductors DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 260pF @ 1V, 1MHz
HERA808G C0G
RFQ
VIEW
RFQ
3,084
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 1000V - Fast Recovery = 200mA (Io) 80ns -55°C ~ 150°C 55pF @ 4V, 1MHz
IDP08E65D1XKSA1
RFQ
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RFQ
1,876
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 1.7V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 80ns -40°C ~ 175°C -
SFA808G C0G
RFQ
VIEW
RFQ
1,990
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
SFA807G C0G
RFQ
VIEW
RFQ
2,629
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 10µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 60pF @ 4V, 1MHz
MUR860 C0G
RFQ
VIEW
RFQ
2,661
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.7V @ 8A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C -
SDUR860
RFQ
VIEW
RFQ
3,731
In-stock
SMC Diode Solutions DIODE GEN PURP 600V TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard - 1.7V @ 8A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
SCS108AGC
RFQ
VIEW
RFQ
3,483
In-stock
Rohm Semiconductor DIODE SCHOTTKY 600V 8A TO220AC - Not For New Designs Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.7V @ 8A 160µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 345pF @ 1V, 1MHz
LFUSCD08065A
RFQ
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RFQ
1,556
In-stock
Littelfuse Inc. DIODE SIC SCHOTTKY 650V 8A TO220 - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 260pF @ 1V, 1MHz