- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
2,827
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | ||||
VIEW |
1,438
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 55pF @ 4V, 1MHz | ||||
VIEW |
2,746
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 55pF @ 4V, 1MHz | ||||
VIEW |
625
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | ||||
VIEW |
3,511
In-stock
|
STMicroelectronics | DIODE SCHOTTKY 600V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 450pF @ 0V, 1MHz | ||||
VIEW |
2,034
In-stock
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | ||||
VIEW |
3,084
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 10µA @ 1000V | - | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 150°C | 55pF @ 4V, 1MHz | ||||
VIEW |
1,876
In-stock
|
Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 1.7V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 80ns | -40°C ~ 175°C | - | ||||
VIEW |
1,990
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,629
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,661
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | - | ||||
VIEW |
3,731
In-stock
|
SMC Diode Solutions | DIODE GEN PURP 600V TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | - | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | ||||
VIEW |
3,483
In-stock
|
Rohm Semiconductor | DIODE SCHOTTKY 600V 8A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 160µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 345pF @ 1V, 1MHz | ||||
VIEW |
1,556
In-stock
|
Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 8A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz |