Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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STPSC8H065D
RFQ
VIEW
RFQ
3,496
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A 1.75V @ 8A 80µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 414pF @ 0V, 1MHz
IDP20E65D2XKSA1
RFQ
VIEW
RFQ
1,728
In-stock
Infineon Technologies DIODE GEN PURP 650V 40A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2-1 Standard 40A (DC) 2.2V @ 20A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 32ns -40°C ~ 175°C -
IDV08E65D2XKSA1
RFQ
VIEW
RFQ
1,484
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 2.3V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 40ns -40°C ~ 175°C -
IDP30E65D2XKSA1
RFQ
VIEW
RFQ
2,412
In-stock
Infineon Technologies DIODE GEN PURP 650V 60A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2-1 Standard 60A (DC) 2.2V @ 30A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 42ns -40°C ~ 175°C -
IDP08E65D1XKSA1
RFQ
VIEW
RFQ
1,876
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 1.7V @ 8A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 80ns -40°C ~ 175°C -
STPSC12H065D
RFQ
VIEW
RFQ
2,892
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 12A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Schottky 12A 1.75V @ 12A 120µA @ 650V 650V Fast Recovery = 200mA (Io) - -40°C ~ 175°C 600pF @ 0V, 1MHz
STPSC10H065D
RFQ
VIEW
RFQ
3,074
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.75V @ 10A 100µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 480pF @ 0V, 1MHz
STPSC6H065D
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VIEW
RFQ
3,219
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 6A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 6A 1.75V @ 6A 60µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 300pF @ 0V, 1MHz
IDV15E65D2XKSA1
RFQ
VIEW
RFQ
2,581
In-stock
Infineon Technologies DIODE GEN PURP 650V 15A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 15A 2.2V @ 15A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 47ns -40°C ~ 175°C -
IDP15E65D1XKSA1
RFQ
VIEW
RFQ
847
In-stock
Infineon Technologies DIODE GEN PURP 650V 15A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 15A 1.7V @ 15A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 114ns -40°C ~ 175°C -
IDP08E65D2XKSA1
RFQ
VIEW
RFQ
2,383
In-stock
Infineon Technologies DIODE GEN PURP 650V 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 8A 2.3V @ 3A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 40ns -40°C ~ 175°C -
IDP40E65D2XKSA1
RFQ
VIEW
RFQ
1,679
In-stock
Infineon Technologies DIODE GEN PURP 650V 40A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Standard 40A 2.3V @ 40A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 75ns -40°C ~ 175°C -
STPSC4H065D
RFQ
VIEW
RFQ
3,528
In-stock
STMicroelectronics DIODE SCHOTTKY 650V 4A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 4A 1.75V @ 4A 40µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -40°C ~ 175°C 200pF @ 0V, 1MHz
IDP15E65D2XKSA1
RFQ
VIEW
RFQ
2,326
In-stock
Infineon Technologies DIODE GEN PURP 650V 15A TO220 - Active Tube Through Hole TO-220-2 TO-220 Standard 15A 2.3V @ 15A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 47ns -40°C ~ 175°C -
IDP30E65D1XKSA1
RFQ
VIEW
RFQ
2,435
In-stock
Infineon Technologies DIODE GEN PURP 650V 60A TO220-2 - Active Tube Through Hole TO-220-2 PG-TO220-2-1 Standard 60A (DC) 1.7V @ 30A 40µA @ 650V 650V Fast Recovery = 200mA (Io) 64ns -40°C ~ 175°C -