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- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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- Capacitance @ Vr, F :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
2,827
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
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VIEW |
625
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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VIEW |
3,542
In-stock
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Rohm Semiconductor | DIODE SCHOTTKY 650V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.55V @ 8A | 160µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 291pF @ 1V, 1MHz | |||
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VIEW |
3,681
In-stock
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Rohm Semiconductor | DIODE SC SCHKY 650V 8A TO220ACP | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 8A (DC) | 1.5V @ 8A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 400pF @ 1V, 1MHz | |||
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VIEW |
1,556
In-stock
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 8A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz |