Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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TRS8E65C,S1Q
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RFQ
2,827
In-stock
Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 8A TO220-2L - Active Tube Through Hole TO-220-2 TO-220-2L Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 90µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 44pF @ 650V, 1MHz
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RFQ
625
In-stock
Comchip Technology DIODE SILICON CARBIDE POWER SCHO - Active - Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 100µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 560pF @ 0V, 1MHz
SCS208AGC
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RFQ
3,542
In-stock
Rohm Semiconductor DIODE SCHOTTKY 650V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A (DC) 1.55V @ 8A 160µA @ 600V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 291pF @ 1V, 1MHz
FFSP08120A
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RFQ
3,297
In-stock
ON Semiconductor DIODE SCHOTTKY 1.2KV 8A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 8A (DC) 1.75V @ 8A 200µA @ 1200V 1200V Fast Recovery = 200mA (Io) - -55°C ~ 175°C 538pF @ 1V, 100kHz
SCS308APC9
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3,681
In-stock
Rohm Semiconductor DIODE SC SCHKY 650V 8A TO220ACP - Active Tube Through Hole TO-220-2 - Silicon Carbide Schottky 8A (DC) 1.5V @ 8A 40µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 400pF @ 1V, 1MHz
LFUSCD08065A
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RFQ
1,556
In-stock
Littelfuse Inc. DIODE SIC SCHOTTKY 650V 8A TO220 - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 8A (DC) 1.7V @ 8A 230µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns 175°C (Max) 260pF @ 1V, 1MHz