Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
1,273
In-stock
Microsemi Corporation DIODE SIC 650V 46A TO247 - Obsolete Bulk Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 46A 1.8V @ 30A 600µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 945pF @ 1V, 1MHz
BYC30W-1200PQ
RFQ
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RFQ
2,457
In-stock
WeEn Semiconductors DIODE GEN PURP 1.2KV 30A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 3.3V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 65ns 175°C (Max) -
APT10SCE170B
RFQ
VIEW
RFQ
3,311
In-stock
Microsemi Corporation DIODE SCHOTTKY 1700V 10A TO247 - Obsolete - Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 23A (DC) 1.8V @ 10A 200µA @ 1700V 1700V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1120pF @ 0V, 1MHz
APT10SCE120B
RFQ
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RFQ
1,098
In-stock
Microsemi Corporation DIODE SCHOTTKY 1200V 10A TO247 - Obsolete - Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 43A (DC) 1.8V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 630pF @ 1V, 1MHz
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RFQ
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RFQ
1,844
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 30A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 30A 1.55V @ 30A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns 175°C (Max) -
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RFQ
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RFQ
657
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 60A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 60A 2V @ 60A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 55ns 175°C (Max) -
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RFQ
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RFQ
691
In-stock
WeEn Semiconductors DIODE GEN PURP 1.2KV 16A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 16A 2.7V @ 16A 100µA @ 1200V 1200V Fast Recovery = 200mA (Io) 105ns 175°C (Max) -
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RFQ
VIEW
RFQ
1,457
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 75A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 75A 2.75V @ 75A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 175°C (Max) -
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RFQ
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RFQ
2,361
In-stock
WeEn Semiconductors DIODE GEN PURP 600V 60A TO247-2 - Active Tube Through Hole TO-247-2 TO-247-2 Standard 60A 2.6V @ 60A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 175°C (Max) -
APT30SCD120B
RFQ
VIEW
RFQ
3,012
In-stock
Microsemi Corporation DIODE SCHOTTKY 1.2KV 99A - Obsolete Tube Through Hole TO-247-2 TO-247 Silicon Carbide Schottky 99A (DC) 1.8V @ 30A 600µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 150°C 2100pF @ 0V, 1MHz
APT60D30BG
RFQ
VIEW
RFQ
1,653
In-stock
Microsemi Corporation DIODE GEN PURP 300V 60A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 60A 1.4V @ 60A 250µA @ 300V 300V Fast Recovery = 200mA (Io) 38ns -55°C ~ 175°C -
FFH15S60STU
RFQ
VIEW
RFQ
3,029
In-stock
ON Semiconductor DIODE GEN PURP 600V 15A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247-2 Standard 15A 2.6V @ 15A 100µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C -
RURG30120
RFQ
VIEW
RFQ
1,328
In-stock
ON Semiconductor DIODE GEN PURP 1.2KV 30A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 30A 2.1V @ 30A 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 150ns -65°C ~ 175°C -
RURG30100
RFQ
VIEW
RFQ
1,962
In-stock
ON Semiconductor DIODE GEN PURP 1KV 30A TO247 - Obsolete Tube Through Hole TO-247-2 TO-247 Standard 30A 1.8V @ 30A 250µA @ 1000V 1000V Fast Recovery = 200mA (Io) 150ns - -
DH60-14A
RFQ
VIEW
RFQ
3,781
In-stock
IXYS DIODE GEN PURP 1.4KV 60A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 60A 2.04V @ 60A 200µA @ 1200V 1400V Fast Recovery = 200mA (Io) 230ns -55°C ~ 150°C 32pF @ 1200V, 1MHz
DSDI60-14A
RFQ
VIEW
RFQ
3,887
In-stock
IXYS DIODE GEN PURP 1.4KV 63A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 63A 4.1V @ 70A 2mA @ 1400V 1400V Fast Recovery = 200mA (Io) 300ns -40°C ~ 150°C -
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RFQ
VIEW
RFQ
3,259
In-stock
ON Semiconductor 1200V 10A SIC SBD - Active - Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 17A (DC) 1.75V @ 10A 200µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 612pF @ 1V, 100kHz
DLA60I1200HA
RFQ
VIEW
RFQ
2,776
In-stock
IXYS DIODE GEN PURP 1200V 60A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 60A 1.19V @ 60A 30µA @ 1200V 1200V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 33pF @ 400V, 1MHz
DHG30I1200HA
RFQ
VIEW
RFQ
1,950
In-stock
IXYS DIODE GEN PURP 1.2KV 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 (HA) Standard 30A 2.26V @ 30A 50µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
VS-40EPF10PBF
RFQ
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RFQ
3,711
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 40A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Modified Standard 40A 1.4V @ 40A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 450ns -40°C ~ 150°C -
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RFQ
VIEW
RFQ
1,284
In-stock
WeEn Semiconductors STANDARD MARKING * HORIZONTAL, R - Active - Through Hole TO-247-2 TO-247-2 Standard 75A - 250µA @ 1200V 1200V Fast Recovery = 200mA (Io) 85ns 175°C (Max) -
VS-30EPF10PBF
RFQ
VIEW
RFQ
1,853
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 30A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Modified Standard 30A 1.41V @ 30A 100µA @ 1000V 1000V Fast Recovery = 200mA (Io) 450ns -40°C ~ 150°C -
DHG20I1200HA
RFQ
VIEW
RFQ
3,428
In-stock
IXYS DIODE GEN PURP 1.2KV 20A TO247 - Active Tube Through Hole TO-247-2 TO-247 (HA) Standard 20A 2.24V @ 20A 25µA @ 1200V 1200V Fast Recovery = 200mA (Io) 200ns -55°C ~ 150°C -
VS-40EPF04PBF
RFQ
VIEW
RFQ
1,758
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 40A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Modified Standard 40A 1.25V @ 40A 100µA @ 400V 400V Fast Recovery = 200mA (Io) 180ns -40°C ~ 150°C -
VS-40EPF02PBF
RFQ
VIEW
RFQ
909
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 40A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Modified Standard 40A 1.25V @ 40A 100µA @ 200V 200V Fast Recovery = 200mA (Io) 180ns -40°C ~ 150°C -
DHG20I600HA
RFQ
VIEW
RFQ
2,477
In-stock
IXYS DIODE GEN PURP 600V 20A TO247 - Active Tube Through Hole TO-247-2 TO-247 (HA) Standard 20A 2.24V @ 20A 25µA @ 600V 600V Fast Recovery = 200mA (Io) 40ns -55°C ~ 150°C -
APT30D40BG
RFQ
VIEW
RFQ
1,372
In-stock
Microsemi Corporation DIODE GEN PURP 400V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 [B] Standard 30A 1.5V @ 30A 250µA @ 400V 400V Fast Recovery = 200mA (Io) 32ns -55°C ~ 175°C -
DSI45-08A
RFQ
VIEW
RFQ
1,280
In-stock
IXYS DIODE GEN PURP 800V 45A TO247AD - Active Tube Through Hole TO-247-2 TO-247AD Standard 45A 1.28V @ 45A 20µA @ 800V 800V Standard Recovery >500ns, > 200mA (Io) - -40°C ~ 175°C -
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RFQ
VIEW
RFQ
3,760
In-stock
IXYS DIODE GEN PURP 1800V 30A TO247 - Active Tube Through Hole TO-247-2 TO-247 Standard 30A 1.25V @ 30A 40µA @ 1800V 1800V Standard Recovery >500ns, > 200mA (Io) - -55°C ~ 175°C 10pF @ 400V, 1MHz
VS-30EPF04PBF
RFQ
VIEW
RFQ
867
In-stock
Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 30A TO247AC - Active Tube Through Hole TO-247-2 TO-247AC Modified Standard 30A 1.41V @ 30A 100µA @ 400V 400V Fast Recovery = 200mA (Io) 160ns -40°C ~ 150°C -