- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Voltage - DC Reverse (Vr) (Max) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 104pF @ 400V, 1MHz (1)
- 1085pF @ 1V, 100kHz (1)
- 1120pF @ 0V, 1MHz (1)
- 1220pF @ 1V, 100KHz (1)
- 1705pF @ 1V, 100kHz (1)
- 1740pF @ 1V, 100kHz (1)
- 1989pF @ 1V, 100kHz (1)
- 2100pF @ 0V, 1MHz (1)
- 2250pF @ 1V, 100kHz (1)
- 2530pF @ 1V, 100kHz (1)
- 2560pF @ 1V, 100kHz (1)
- 2940pF @ 1V, 1MHz (1)
- 600pF @ 0V, 1MHz (1)
- 612pF @ 1V, 100kHz (1)
- 630pF @ 1V, 1MHz (1)
- 887pF @ 1V, 100kHz (1)
- 936pF @ 1V, 100kHz (1)
- 945pF @ 1V, 1MHz (1)
- 968pF @ 1V, 1MHz (1)
- Applied Filters :
23 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,273
In-stock
|
Microsemi Corporation | DIODE SIC 650V 46A TO247 | - | Obsolete | Bulk | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 46A | 1.8V @ 30A | 600µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 945pF @ 1V, 1MHz | |||
|
VIEW |
3,311
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | |||
|
|
VIEW |
1,098
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
|
|
VIEW |
3,012
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 99A | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 99A (DC) | 1.8V @ 30A | 600µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 2100pF @ 0V, 1MHz | |||
|
|
VIEW |
3,259
In-stock
|
ON Semiconductor | 1200V 10A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 17A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
|
|
VIEW |
2,886
In-stock
|
ON Semiconductor | 1200V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 61A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2250pF @ 1V, 100kHz | |||
|
VIEW |
2,525
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
|
|
VIEW |
1,398
In-stock
|
ON Semiconductor | 1200V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 77A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2560pF @ 1V, 100kHz | |||
|
|
VIEW |
3,610
In-stock
|
ON Semiconductor | 1200V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 46A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1740pF @ 1V, 100kHz | |||
|
|
VIEW |
3,440
In-stock
|
ON Semiconductor | 650V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | |||
|
|
VIEW |
1,854
In-stock
|
ON Semiconductor | 650V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 48A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1989pF @ 1V, 100kHz | |||
|
|
VIEW |
1,643
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | 1220pF @ 1V, 100KHz | |||
|
|
VIEW |
3,408
In-stock
|
ON Semiconductor | 650V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | |||
|
|
VIEW |
2,798
In-stock
|
ON Semiconductor | 1200V 15A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
|
|
VIEW |
1,122
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 700V 50A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 50A (DC) | 1.5V @ 50A | - | 700V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
3,576
In-stock
|
ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 25A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
|
|
VIEW |
3,701
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 15A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 15A (DC) | 1.5V @ 15A | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
3,665
In-stock
|
ON Semiconductor | 650V 16A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 887pF @ 1V, 100kHz | |||
|
|
VIEW |
2,911
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 43A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 104pF @ 400V, 1MHz | |||
|
|
VIEW |
3,792
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 10A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 10A (DC) | 1.5V @ 10A | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
2,394
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 30A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 30A (DC) | 1.5V @ 30A | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
1,310
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz | |||
|
|
VIEW |
1,728
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | - | Active | Bulk | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 20A | 2V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 968pF @ 1V, 1MHz | |||
