- Current - Average Rectified (Io) :
- Operating Temperature - Junction :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Mounting Type | Package / Case | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||
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VIEW |
3,440
In-stock
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ON Semiconductor | 650V 50A SIC SBD | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | |||
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VIEW |
1,854
In-stock
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ON Semiconductor | 650V 40A SIC SBD | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 48A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1989pF @ 1V, 100kHz | |||
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VIEW |
3,408
In-stock
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ON Semiconductor | 650V 30A SIC SBD | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | |||
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VIEW |
3,576
In-stock
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ON Semiconductor | 650V 20A SIC SBD | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 25A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | |||
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VIEW |
3,665
In-stock
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ON Semiconductor | 650V 16A SIC SBD | Active | - | Through Hole | TO-247-2 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 887pF @ 1V, 100kHz | |||
