- Part Status :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Voltage - DC Reverse (Vr) (Max) :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,098
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
|
VIEW |
3,781
In-stock
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IXYS | DIODE GEN PURP 1.4KV 60A TO247AD | - | Active | Tube | Through Hole | TO-247-2 | TO-247AD | Standard | 60A | 2.04V @ 60A | 200µA @ 1200V | 1400V | Fast Recovery = 200mA (Io) | 230ns | -55°C ~ 150°C | 32pF @ 1200V, 1MHz | |||
|
VIEW |
3,259
In-stock
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ON Semiconductor | 1200V 10A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 17A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
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|
VIEW |
2,886
In-stock
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ON Semiconductor | 1200V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 61A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2250pF @ 1V, 100kHz | |||
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|
VIEW |
1,398
In-stock
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ON Semiconductor | 1200V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 77A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2560pF @ 1V, 100kHz | |||
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|
VIEW |
3,610
In-stock
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ON Semiconductor | 1200V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 46A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1740pF @ 1V, 100kHz | |||
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|
VIEW |
1,643
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | 1220pF @ 1V, 100KHz | |||
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|
VIEW |
2,798
In-stock
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ON Semiconductor | 1200V 15A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
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|
VIEW |
2,911
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 43A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 104pF @ 400V, 1MHz | |||
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|
VIEW |
1,310
In-stock
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
1,728
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | - | Active | Bulk | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 20A | 2V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 968pF @ 1V, 1MHz | |||
