- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.1 Ohm @ 380mA, 10V (2)
- 1.5 Ohm @ 340mA, 10V (2)
- 1.5 Ohm @ 360mA, 10V (2)
- 1.7 Ohm @ 1A, 10V (1)
- 1.8 Ohm @ 210mA, 10V (2)
- 12 Ohm @ 200mA, 10V (1)
- 12 Ohm @ 500mA, 10V (2)
- 13 Ohm @ 400mA, 10V (1)
- 15 Ohm @ 200mA, 10V (1)
- 15 Ohm @ 300mA, 10V (2)
- 17 Ohm @ 170mA, 10V (1)
- 2 Ohm @ 1A, 10V (1)
- 2 Ohm @ 270mA, 10V (2)
- 20 Ohm @ 100mA, 10V (3)
- 3 Ohm @ 220mA, 10V (2)
- 3 Ohm @ 240mA, 10V (2)
- 3.6 Ohm @ 210mA, 10V (2)
- 4 Ohm @ 500mA, 10V (1)
- 4.4 Ohm @ 190mA, 10V (2)
- 5 Ohm @ 100mA, 2.8V (2)
- 5 Ohm @ 300mA, 10V (2)
- 6 Ohm @ 250mA, 10V (1)
- 800 mOhm @ 480mA, 10V (2)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
39 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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|
VIEW |
1,558
In-stock
|
NXP USA Inc. | MOSFET P-CH 300V 0.17A SOT54 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | P-Channel | 300V | 170mA (Ta) | 17 Ohm @ 170mA, 10V | 2.55V @ 1mA | - | 90pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,963
In-stock
|
NXP USA Inc. | MOSFET P-CH 250V 0.2A SOT54 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | P-Channel | 250V | 200mA (Ta) | 15 Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 90pF @ 25V | 10V | 20V | |||
|
|
VIEW |
2,239
In-stock
|
NXP USA Inc. | MOSFET N-CH 300V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 300V | 300mA (Ta) | 6 Ohm @ 250mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 2.4V, 10V | ±20V | |||
|
|
VIEW |
3,154
In-stock
|
NXP USA Inc. | MOSFET N-CH 250V 310MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 250V | 310mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 2.4V, 10V | ±20V | |||
|
|
VIEW |
3,543
In-stock
|
NXP USA Inc. | MOSFET N-CH 250V 310MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 250V | 310mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 2.4V, 10V | ±20V | |||
|
|
VIEW |
2,751
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
|
|
VIEW |
1,415
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
|
VIEW |
892
In-stock
|
ON Semiconductor | MOSFET N-CH 90V 2A TO-92 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | N-Channel | 90V | 2A (Ta) | 2 Ohm @ 1A, 10V | 3.5V @ 1mA | - | 70pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,127
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 2A TO-92 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | N-Channel | 60V | 2A (Ta) | 1.7 Ohm @ 1A, 10V | 3.5V @ 1mA | - | 70pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,709
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,421
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,293
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 400mA (Ta) | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,204
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,429
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,283
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 0.56A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 560mA (Ta) | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,723
In-stock
|
Microchip Technology | MOSFET N-CH 400V 0.175A TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | N-Channel | 400V | 175mA (Tj) | 12 Ohm @ 500mA, 10V | 2V @ 1mA | - | 125pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,705
In-stock
|
Microchip Technology | MOSFET N-CH 600V 0.16A TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 600V | 160mA (Tj) | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | 150pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,603
In-stock
|
Microchip Technology | MOSFET N-CH 600V 0.16A TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 600V | 160mA (Tj) | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | 150pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,177
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,078
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,901
In-stock
|
Microchip Technology | MOSFET N-CH 400V 0.175A TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | N-Channel | 400V | 175mA (Tj) | 12 Ohm @ 500mA, 10V | 2V @ 1mA | - | 125pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,557
In-stock
|
Panasonic Electronic Components | MOSFET N-CH 80V 500MA 3-SIP | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | 3-SIP | M-A1 | 1W (Ta) | N-Channel | 80V | 500mA (Ta) | 4 Ohm @ 500mA, 10V | 3.5V @ 1mA | - | 45pF @ 10V | 10V | 20V | |||
|
|
VIEW |
1,003
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 320MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 600V | 320mA (Ta) | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,991
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 370MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 500V | 370mA (Ta) | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,757
In-stock
|
Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 400V | 490mA (Ta) | 1.8 Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,305
In-stock
|
Vishay Siliconix | MOSFET N-CH 400V 350MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 400V | 350mA (Ta) | 3.6 Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,544
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,393
In-stock
|
Microchip Technology | MOSFET N-CH 600V 0.16A TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | N-Channel | 600V | 160mA (Tj) | 20 Ohm @ 100mA, 10V | 4V @ 2mA | - | 150pF @ 25V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
616
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,475
In-stock
|
Microchip Technology | MOSFET P-CH 350V 0.18A TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | P-Channel | 350V | 180mA (Tj) | 15 Ohm @ 300mA, 10V | 2V @ 1mA | - | 300pF @ 25V | 2.5V, 10V | ±20V | |||
