- Manufacture :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,963
In-stock
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NXP USA Inc. | MOSFET P-CH 250V 0.2A SOT54 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | P-Channel | 250V | 200mA (Ta) | 15 Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 90pF @ 25V | 10V | 20V | |||
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VIEW |
3,154
In-stock
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NXP USA Inc. | MOSFET N-CH 250V 310MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 250V | 310mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 2.4V, 10V | ±20V | |||
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VIEW |
3,543
In-stock
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NXP USA Inc. | MOSFET N-CH 250V 310MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 250V | 310mA (Ta) | 5 Ohm @ 300mA, 10V | 2V @ 1mA | - | 120pF @ 25V | 2.4V, 10V | ±20V | |||
|
VIEW |
1,709
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
3,421
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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VIEW |
3,078
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 630mA (Ta) | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
616
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 250V | 450mA (Ta) | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
