- Manufacture :
- Part Status :
- Packaging :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,751
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
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VIEW |
1,415
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 300MA SOT54 | - | Obsolete | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta) | N-Channel | 200V | 300mA (Ta) | 5 Ohm @ 100mA, 2.8V | 1.8V @ 1mA | - | 120pF @ 25V | 2.8V | ±20V | |||
|
VIEW |
1,293
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 400mA (Ta) | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,204
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,429
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,283
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 0.56A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 560mA (Ta) | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,544
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 600mA (Ta) | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,631
In-stock
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Microchip Technology | MOSFET P-CH 200V 0.175A TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Ta) | P-Channel | 200V | 175mA (Tj) | 12 Ohm @ 200mA, 10V | 2.4V @ 1mA | - | 150pF @ 25V | 5V, 10V | ±20V | |||
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|
VIEW |
905
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 0.56A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 560mA (Ta) | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,495
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | 200V | 400mA (Ta) | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
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|
VIEW |
601
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
