Packaging :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
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RFQ
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RFQ
2,280
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 555W (Tc) N-Channel 1200V 80A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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RFQ
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RFQ
1,995
In-stock
Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 175W (Tc) N-Channel 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - 20V +25V, -10V
APT40SM120B
RFQ
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RFQ
1,687
In-stock
Microsemi Corporation MOSFET N-CH 1200V 41A TO247 - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 273W (Tc) N-Channel 1200V 41A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V
GA20JT12-247
RFQ
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RFQ
2,973
In-stock
GeneSiC Semiconductor TRANS SJT 1.2KV 20A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 20A (Tc) 70 mOhm @ 20A - - - - -
GA10JT12-247
RFQ
VIEW
RFQ
2,727
In-stock
GeneSiC Semiconductor TRANS SJT 1.2KV 10A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 170W (Tc) - 1200V 10A (Tc) 140 mOhm @ 10A - - - - -
GA05JT12-247
RFQ
VIEW
RFQ
3,666
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 5A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - 1200V 5A (Tc) 280 mOhm @ 5A - - - - -
GA06JT12-247
RFQ
VIEW
RFQ
1,525
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 6A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB - - 1200V 6A (Tc) (90°C) 220 mOhm @ 6A - - - - -
GA03JT12-247
RFQ
VIEW
RFQ
1,365
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 3A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 15W (Tc) - 1200V 3A (Tc) (95°C) 460 mOhm @ 3A - - - - -
CMF20120D
RFQ
VIEW
RFQ
783
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247-3 215W (Tc) N-Channel 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
IXTH12N120
RFQ
VIEW
RFQ
1,744
In-stock
IXYS MOSFET N-CH 1200V 12A TO-247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 500W (Tc) N-Channel 1200V 12A (Tc) 1.4 Ohm @ 6A, 10V 5V @ 250µA 95nC @ 10V 3400pF @ 25V 10V ±30V
GA20SICP12-247
RFQ
VIEW
RFQ
2,303
In-stock
GeneSiC Semiconductor TRANS SJT 1200V 45A TO247 - Active Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - 1200V 45A (Tc) 50 mOhm @ 20A - - 3091pF @ 800V - -
IXFH6N120
RFQ
VIEW
RFQ
3,771
In-stock
IXYS MOSFET N-CH 1200V 6A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel 1200V 6A (Tc) 2.6 Ohm @ 3A, 10V 5V @ 2.5mA 56nC @ 10V 1950pF @ 25V 10V ±20V
IXFH6N120P
RFQ
VIEW
RFQ
1,376
In-stock
IXYS MOSFET N-CH 1200V 6A TO-247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 250W (Tc) N-Channel 1200V 6A (Tc) 2.4 Ohm @ 500mA, 10V 5V @ 1mA 92nC @ 10V 2830pF @ 25V 10V ±30V
IXTH3N120
RFQ
VIEW
RFQ
2,191
In-stock
IXYS MOSFET N-CH 1200V 3A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 200W (Tc) N-Channel 1200V 3A (Tc) 4.5 Ohm @ 500mA, 10V 4.5V @ 250µA 39nC @ 10V 1300pF @ 25V 10V ±20V
IXTH2R4N120P
RFQ
VIEW
RFQ
1,893
In-stock
IXYS MOSFET N-CH 1200V 2.4A TO-247 Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 125W (Tc) N-Channel 1200V 2.4A (Tc) 7.5 Ohm @ 500mA, 10V 4.5V @ 250µA 37nC @ 10V 1207pF @ 25V 10V ±20V
STW6N120K3
RFQ
VIEW
RFQ
2,864
In-stock
STMicroelectronics MOSFET N-CH 1200V 6A TO-247 SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
APT12057B2LLG
RFQ
VIEW
RFQ
2,293
In-stock
Microsemi Corporation MOSFET N-CH 1200V 22A T-MAX POWER MOS 7® Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 T-MAX™ [B2] 690W (Tc) N-Channel 1200V 22A (Tc) 570 mOhm @ 11A, 10V 5V @ 2.5mA 290nC @ 10V 6200pF @ 25V 10V ±30V
IXTX17N120L
RFQ
VIEW
RFQ
3,193
In-stock
IXYS MOSFET N-CH 1200V 17A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
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RFQ
VIEW
RFQ
606
In-stock
STMicroelectronics MOSFET N-CH 1200V 65A HIP247 - Active - SiCFET (Silicon Carbide) -55°C ~ 200°C (TJ) Through Hole TO-247-3 HiP247™ 318W (Tc) N-Channel 1200V 65A (Tc) 69 mOhm @ 40A, 20V 3V @ 1mA 122nC @ 20V 1900pF @ 400V 20V +25V, -10V
IXFX26N120P
RFQ
VIEW
RFQ
1,897
In-stock
IXYS MOSFET N-CH 1200V 26A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 960W (Tc) N-Channel 1200V 26A (Tc) 500 mOhm @ 13A, 10V 6.5V @ 1mA 225nC @ 10V 16000pF @ 25V 10V ±30V
APT1201R4BFLLG
RFQ
VIEW
RFQ
765
In-stock
Microsemi Corporation MOSFET N-CH 1200V 9A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel 1200V 9A (Tc) 1.5 Ohm @ 4.5A, 10V 5V @ 1mA 75nC @ 10V 2030pF @ 25V 10V ±30V
IXFH12N120P
RFQ
VIEW
RFQ
3,193
In-stock
IXYS MOSFET N-CH 1200V 12A TO-247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 543W (Tc) N-Channel 1200V 12A (Tc) 1.35 Ohm @ 500mA, 10V 6.5V @ 1mA 103nC @ 10V 5400pF @ 25V 10V ±30V
IXTH6N120
RFQ
VIEW
RFQ
3,095
In-stock
IXYS MOSFET N-CH 1200V 6A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel 1200V 6A (Tc) 2.6 Ohm @ 3A, 10V 5V @ 250µA 56nC @ 10V 1950pF @ 25V 10V ±20V
C2M0025120D
RFQ
VIEW
RFQ
603
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 90A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 463W (Tc) N-Channel 1200V 90A (Tc) 34 mOhm @ 50A, 20V 2.4V @ 10mA 161nC @ 20V 2788pF @ 1000V 20V +25V, -10V
SCT3030KLGC11
RFQ
VIEW
RFQ
1,152
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 72A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 339W (Tc) N-Channel 1200V 72A (Tc) 39 mOhm @ 27A, 18V 5.6V @ 13.3mA 131nC @ 18V 2222pF @ 800V 18V +22V, -4V
C2M0040120D
RFQ
VIEW
RFQ
3,736
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 60A TO-247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 330W (Tc) N-Channel 1200V 60A (Tc) 52 mOhm @ 40A, 20V 2.8V @ 10mA 115nC @ 20V 1893pF @ 1000V 20V +25V, -10V
SCT2080KEC
RFQ
VIEW
RFQ
2,630
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 40A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 262W (Tc) N-Channel 1200V 40A (Tc) 117 mOhm @ 10A, 18V 4V @ 4.4mA 106nC @ 18V 2080pF @ 800V 18V +22V, -6V
SCT3040KLGC11
RFQ
VIEW
RFQ
2,729
In-stock
Rohm Semiconductor MOSFET NCH 1.2KV 55A TO247N - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247N 262W (Tc) N-Channel 1200V 55A (Tc) 52 mOhm @ 20A, 18V 5.6V @ 10mA 107nC @ 18V 1337pF @ 800V 18V +22V, -4V
C2M0080120D
RFQ
VIEW
RFQ
1,535
In-stock
Cree/Wolfspeed MOSFET N-CH 1200V 31.6A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 192W (Tc) N-Channel 1200V 36A (Tc) 98 mOhm @ 20A, 20V 4V @ 5mA 62nC @ 5V 950pF @ 1000V 20V +25V, -10V
SCT2280KEC
RFQ
VIEW
RFQ
2,045
In-stock
Rohm Semiconductor MOSFET N-CH 1200V 14A TO-247 - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-247-3 TO-247 108W (Tc) N-Channel 1200V 14A (Tc) 364 mOhm @ 4A, 18V 4V @ 1.4mA 36nC @ 18V 667pF @ 800V 18V +22V, -6V