- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Power Dissipation (Max) :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,280
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 555W (Tc) | N-Channel | 1200V | 80A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
1,995
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 175W (Tc) | N-Channel | 1200V | 25A (Tc) | 175 mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
1,687
In-stock
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Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | |||
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VIEW |
2,864
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 6A TO-247 | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 150W (Tc) | N-Channel | 1200V | 6A (Tc) | 2.4 Ohm @ 2.5A, 10V | 5V @ 100µA | 34nC @ 10V | 1050pF @ 100V | 10V | ±30V | |||
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VIEW |
2,630
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 2080pF @ 800V | 18V | +22V, -6V | |||
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VIEW |
2,045
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 14A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 108W (Tc) | N-Channel | 1200V | 14A (Tc) | 364 mOhm @ 4A, 18V | 4V @ 1.4mA | 36nC @ 18V | 667pF @ 800V | 18V | +22V, -6V | |||
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VIEW |
965
In-stock
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Cree/Wolfspeed | MOSFET N-CH 1200V 24A TO247 | Z-FET™ | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247 | 134W (Tc) | N-Channel | 1200V | 24A (Tc) | 220 mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | 928pF @ 800V | 20V | +25V, -5V | |||
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VIEW |
737
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 12A TO247 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 250W (Tc) | N-Channel | 1200V | 12A (Tc) | 690 mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | 10V | ±30V | |||
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VIEW |
690
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 40A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 262W (Tc) | N-Channel | 1200V | 40A (Tc) | 117 mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | 1850pF @ 800V | 18V | +22V, -6V | |||
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VIEW |
1,872
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 22A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 1200V | 22A (Tc) | 208 mOhm @ 7A, 18V | 4V @ 2.5mA | 62nC @ 18V | 1200pF @ 800V | 18V | +22V, -6V | |||
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VIEW |
1,775
In-stock
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Rohm Semiconductor | MOSFET N-CH 1200V 10A TO-247 | - | Active | Tube | SiCFET (Silicon Carbide) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 85W (Tc) | N-Channel | 1200V | 10A (Tc) | 585 mOhm @ 3A, 18V | 4V @ 900µA | 27nC @ 18V | 463pF @ 800V | 18V | +22V, -6V | |||
