- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,995
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 175W (Tc) | N-Channel | 1200V | 25A (Tc) | 175 mOhm @ 10A, 20V | 2.5V @ 1mA | 72nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
2,775
In-stock
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STMicroelectronics | MOSFET N-CH 1200V 20A HIP247 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 175W (Tc) | N-Channel | 1200V | 20A (Tc) | 290 mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | 650pF @ 400V | 20V | +25V, -10V | |||
