- Manufacture :
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- Part Status :
- Technology :
- Package / Case :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,270
In-stock
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EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,536
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,764
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,426
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,456
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,488
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 32A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | 1050pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,393
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | - | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 11A (Ta) | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | 345pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,989
In-stock
|
EPC | TRANS GAN 200V 22A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (7-Solder Bar) | - | N-Channel | - | 200V | 22A (Ta) | 25 mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,159
In-stock
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
1,808
In-stock
|
EPC | TRANS GAN 200V 5A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (4-Solder Bar) | - | N-Channel | - | 200V | 5A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | 140pF @ 100V | 5V | +6V, -4V | |||
