- Manufacture :
- Part Status :
- Technology :
- Mounting Type :
- Package / Case :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.7 mOhm @ 1600A, 10V (1)
- 10 mOhm @ 104A, 10V (2)
- 10 mOhm @ 20A, 5V (6)
- 100 mOhm @ 3A, 5V (3)
- 100 mOhm @ 4.2A, 10V (6)
- 12 mOhm @ 87.5A, 10V (2)
- 19 mOhm @ 50A, 10V (1)
- 25 mOhm @ 12A, 5V (3)
- 25 mOhm @ 17A, 10V (1)
- 25 mOhm @ 20A, 5V (3)
- 3.6 mOhm @ 290A, 10V (1)
- 3.8 mOhm @ 430A, 10V (1)
- 5 mOhm @ 158.5A, 10V (1)
- 5 mOhm @ 186A, 10V (2)
- 5 mOhm @ 208.5A, 10V (1)
- 50 mOhm @ 7A, 5V (3)
- 59.9 mOhm @ 5.5A, 10V (6)
- 6 mOhm @ 158.5A, 10V (2)
- 9 mOhm @ 74.5A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
46 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,270
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
|
VIEW |
878
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,536
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
882
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
869
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
VIEW |
710
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 195A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 780W (Tc) | N-Channel | - | 200V | 195A (Tc) | 9 mOhm @ 74.5A, 10V | 5V @ 4mA | 217nC @ 10V | 12300pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,997
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 317A J3 | - | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | J3 Module | Module | 1136W (Tc) | N-Channel | - | 200V | 317A (Tc) | 5 mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,759
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 175A SP4 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | 694W (Tc) | N-Channel | - | 200V | 175A (Tc) | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,982
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 317A SP6 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 1136W (Tc) | N-Channel | - | 200V | 317A (Tc) | 6 mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,478
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 175A SP4 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | 694W (Tc) | N-Channel | - | 200V | 175A (Tc) | 12 mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,735
In-stock
|
IXYS | MOSFET N-CH 200V 1900A Y3-LI | PolarHT™ | Obsolete | Tray | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li | - | N-Channel | - | 200V | 1900A (Tc) | 1.7 mOhm @ 1600A, 10V | 5V @ 5mA | 2900nC @ 10V | - | 10V | ±20V | |||
|
|
VIEW |
1,764
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,984
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,377
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,777
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 417A SP6 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 1560W (Tc) | N-Channel | - | 200V | 417A (Tc) | 5 mOhm @ 208.5A, 10V | 5V @ 10mA | 560nC @ 10V | 28800pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,920
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 372A SP6 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 1250W (Tc) | N-Channel | - | 200V | 372A (Tc) | 5 mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 10V | ±30V | |||
|
VIEW |
661
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 317A SP6 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 1136W (Tc) | N-Channel | - | 200V | 317A (Tc) | 6 mOhm @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | 27400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,456
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 208A SP4 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | 781W (Tc) | N-Channel | - | 200V | 208A (Tc) | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,466
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 208A SP4 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | 781W (Tc) | N-Channel | - | 200V | 208A (Tc) | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,900
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
|
VIEW |
1,302
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 109A SP1 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 | 480W (Tc) | N-Channel | - | 200V | 109A (Tc) | 19 mOhm @ 50A, 10V | 4V @ 2.5mA | - | 9880pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
1,426
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,386
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,746
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 4.6A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 89W (Tc) | N-Channel | - | 200V | 4.6A (Ta), 26A (Tc) | 59.9 mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,215
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 580A SP6 | POWER MOS 7® | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 2270W (Tc) | N-Channel | - | 200V | 580A (Tc) | 3.6 mOhm @ 290A, 10V | 5V @ 15mA | 840nC @ 10V | 43300pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,918
In-stock
|
Microsemi Corporation | MOSFET N-CH 200V 372A SP6 | - | Active | Bulk | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 | 1250W (Tc) | N-Channel | - | 200V | 372A (Tc) | 5 mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,456
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
919
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,579
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 3.4A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | DIRECTFET™ MZ | 2.8W (Ta), 57W (Tc) | N-Channel | - | 200V | 3.4A (Ta), 19A (Tc) | 100 mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,488
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 32A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | 1050pF @ 100V | 5V | +6V, -4V | |||
