- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.2 Ohm @ 2.6A, 10V (1)
- 110 mOhm @ 13.8A, 10V (1)
- 155 mOhm @ 10A, 10V (1)
- 175 mOhm @ 10A, 10V (1)
- 190 mOhm @ 7.9A, 10V (3)
- 250 mOhm @ 6.9A, 10V (1)
- 290 mOhm @ 8.5A, 10V (1)
- 300 mOhm @ 5.8A, 10V (1)
- 300 mOhm @ 6.9A, 10V (1)
- 380 mOhm @ 4.9A, 10V (2)
- 390 mOhm @ 5.5A, 10V (1)
- 450 mOhm @ 4.9A, 10V (1)
- 450 mOhm @ 5.8A, 10V (1)
- 500 mOhm @ 4.6A, 10V (1)
- 500 mOhm @ 4A, 10V (1)
- 540 mOhm @ 4A, 10V (1)
- 550 mOhm @ 4.8A, 10V (1)
- 600 mOhm @ 3.5A, 10V (1)
- 65 mOhm @ 19.4A, 10V (1)
- 650 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.9A, 10V (1)
- 750 mOhm @ 3.1A, 10V (1)
- 780 mOhm @ 3.4A, 10V (1)
- 80 mOhm @ 17.5A, 10V (1)
- 88 mOhm @ 15.4A, 10V (1)
- 900 mOhm @ 2.7A, 10V (1)
- 95 mOhm @ 17.5A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.6mA (1)
- 3.5V @ 170µA (1)
- 3.5V @ 180µA (1)
- 3.5V @ 2.1mA (1)
- 3.5V @ 250µA (1)
- 3.5V @ 300µA (1)
- 3.5V @ 350µA (1)
- 3.5V @ 450µA (1)
- 3.5V @ 690µA (1)
- 3.7V @ 1.5mA (2)
- 3.7V @ 1.9mA (1)
- 3.7V @ 1mA (1)
- 3.7V @ 270µA (1)
- 3.7V @ 310µA (1)
- 3.7V @ 350µA (1)
- 3.7V @ 400µA (1)
- 3.7V @ 500µA (2)
- 3.7V @ 600µA (1)
- 3.7V @ 790µA (2)
- 4.5V @ 1mA (1)
- 4.5V @ 2.1mA (1)
- 4.5V @ 350µA (1)
- 4.5V @ 400µA (1)
- 4.5V @ 500µA (1)
- 4.5V @ 690µA (1)
- 4V @ 450µA (1)
- 4V @ 570µA (1)
- 4V @ 850µA (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 10.5nC @ 10V (2)
- 100nC @ 10V (1)
- 110nC @ 10V (1)
- 115nC @ 10V (1)
- 11nC @ 10V (1)
- 12nC @ 10V (1)
- 15nC @ 10V (2)
- 16nC @ 10V (2)
- 18.5nC @ 10V (1)
- 19nC @ 10V (1)
- 20nC @ 10V (3)
- 22nC @ 10V (1)
- 23nC @ 10V (1)
- 25nC @ 10V (3)
- 32nC @ 10V (1)
- 35nC @ 10V (1)
- 38nC @ 10V (1)
- 40nC @ 10V (2)
- 43nC @ 10V (1)
- 48nC @ 10V (1)
- 55nC @ 10V (1)
- 75nC @ 10V (1)
- 86nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
31 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,013
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,384
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,105
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
774
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,380
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A DTMOSIV | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 40W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
963
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
950
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 80 mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,647
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 500 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,939
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 650 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,948
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,857
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 6.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 6.8A (Ta) | 780 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,052
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,434
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 7A (Ta) | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,089
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 27.6A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 650V | 27.6A (Ta) | 110 mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,148
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,580
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,235
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,318
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 5.4A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 5.4A (Ta) | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,192
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,842
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,768
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.2 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,398
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,168
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 17A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 17A (Ta) | 290 mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | 2050pF @ 300V | 10V | ±20V | |||
|
|
VIEW |
3,820
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 11.5A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 11.5A (Ta) | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | 10V | ±20V | |||
