- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
-
- 100A (Ta) (1)
- 11.1A (Ta) (1)
- 11.5A (Ta) (5)
- 13.7A (Ta) (8)
- 15.8A (Ta) (8)
- 17.3A (Ta) (2)
- 17A (Ta) (2)
- 20A (Ta) (6)
- 27.6A (Ta) (2)
- 30.8A (Ta) (6)
- 35A (Ta) (4)
- 38.8A (Ta) (5)
- 5.2A (Ta) (2)
- 5.4A (Ta) (2)
- 5.8A (Ta) (2)
- 6.2A (Ta) (2)
- 6.5A (Ta) (1)
- 6.8A (Ta) (1)
- 61.8A (Ta) (2)
- 7.8A (Ta) (2)
- 7A (Ta) (3)
- 8A (Ta) (3)
- 9.3A (Ta) (1)
- 9.5A (Ta) (1)
- 9.7A (Ta) (5)
- Rds On (Max) @ Id, Vgs :
-
- 1 Ohm @ 2.9A, 10V (1)
- 1.05 Ohm @ 2.9A, 10V (1)
- 1.2 Ohm @ 2.6A, 10V (1)
- 1.22 Ohm @ 2.6A, 10V (1)
- 110 mOhm @ 13.8A, 10V (2)
- 155 mOhm @ 10A, 10V (4)
- 175 mOhm @ 10A, 10V (2)
- 18 mOhm @ 50A, 10V (1)
- 190 mOhm @ 7.9A, 10V (7)
- 200 mOhm @ 8.7A, 10V (2)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (4)
- 290 mOhm @ 8.5A, 10V (2)
- 300 mOhm @ 5.8A, 10V (2)
- 300 mOhm @ 6.9A, 10V (4)
- 340 mOhm @ 5.8A, 10V (1)
- 38 mOhm @ 30.9A, 10V (1)
- 380 mOhm @ 4.9A, 10V (3)
- 390 mOhm @ 5.5A, 10V (1)
- 40 mOhm @ 30.9A, 10V (1)
- 430 mOhm @ 4.9A, 10V (1)
- 450 mOhm @ 4.9A, 10V (1)
- 450 mOhm @ 5.8A, 10V (2)
- 500 mOhm @ 4.6A, 10V (1)
- 500 mOhm @ 4A, 10V (2)
- 540 mOhm @ 4A, 10V (1)
- 550 mOhm @ 4.8A, 10V (1)
- 600 mOhm @ 3.5A, 10V (2)
- 65 mOhm @ 19.4A, 10V (4)
- 650 mOhm @ 3.5A, 10V (1)
- 650 mOhm @ 3.9A, 10V (1)
- 670 mOhm @ 3.9A, 10V (1)
- 74 mOhm @ 19.4A, 10V (1)
- 750 mOhm @ 3.1A, 10V (1)
- 780 mOhm @ 3.4A, 10V (1)
- 80 mOhm @ 17.5A, 10V (2)
- 820 mOhm @ 3.1A, 10V (1)
- 88 mOhm @ 15.4A, 10V (5)
- 900 mOhm @ 2.7A, 10V (2)
- 95 mOhm @ 17.5A, 10V (2)
- 950 mOhm @ 3.3A, 10V (1)
- 99 mOhm @ 15.4A, 10V (1)
- Vgs(th) (Max) @ Id :
-
- 3.5V @ 1.6mA (2)
- 3.5V @ 170µA (2)
- 3.5V @ 180µA (2)
- 3.5V @ 2.1mA (2)
- 3.5V @ 250µA (1)
- 3.5V @ 300µA (2)
- 3.5V @ 350µA (1)
- 3.5V @ 450µA (1)
- 3.5V @ 690µA (4)
- 3.5V @ 900µA (2)
- 3.7V @ 1.5mA (6)
- 3.7V @ 1.9mA (4)
- 3.7V @ 1mA (4)
- 3.7V @ 270µA (2)
- 3.7V @ 3.1mA (2)
- 3.7V @ 310µA (2)
- 3.7V @ 350µA (2)
- 3.7V @ 400µA (2)
- 3.7V @ 500µA (4)
- 3.7V @ 5mA (1)
- 3.7V @ 600µA (3)
- 3.7V @ 790µA (6)
- 4.5V @ 1.5mA (1)
- 4.5V @ 1.9mA (1)
- 4.5V @ 1mA (2)
- 4.5V @ 2.1mA (2)
- 4.5V @ 350µA (1)
- 4.5V @ 400µA (1)
- 4.5V @ 500µA (1)
- 4.5V @ 690µA (4)
- 4.5V @ 790µA (1)
- 4V @ 280µA (1)
- 4V @ 450µA (1)
- 4V @ 570µA (2)
- 4V @ 850µA (2)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 10.5nC @ 10V (4)
- 100nC @ 10V (2)
- 105nC @ 10V (2)
- 110nC @ 10V (3)
- 115nC @ 10V (2)
- 11nC @ 10V (2)
- 12nC @ 10V (2)
- 135nC @ 10V (2)
- 13nC @ 10V (1)
- 15nC @ 10V (3)
- 16nC @ 10V (3)
- 18.5nC @ 10V (2)
- 180nC @ 10V (2)
- 19nC @ 10V (1)
- 20nC @ 10V (5)
- 22nC @ 10V (1)
- 23nC @ 10V (2)
- 25nC @ 10V (5)
- 32nC @ 10V (2)
- 35nC @ 10V (4)
- 360nC @ 10V (1)
- 38nC @ 10V (5)
- 40nC @ 10V (5)
- 43nC @ 10V (2)
- 45nC @ 10V (2)
- 48nC @ 10V (4)
- 55nC @ 10V (2)
- 75nC @ 10V (2)
- 86nC @ 10V (4)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1150pF @ 300V (1)
- 1300pF @ 300V (8)
- 1350pF @ 300V (8)
- 1400pF @ 300V (2)
- 15000pF @ 30V (1)
- 1680pF @ 300V (4)
- 1800pF @ 300V (4)
- 2050pF @ 300V (2)
- 3000pF @ 300V (8)
- 380pF @ 300V (4)
- 390pF @ 300V (4)
- 4100pF @ 300V (9)
- 490pF @ 300V (4)
- 570pF @ 300V (4)
- 590pF @ 300V (1)
- 6500pF @ 300V (2)
- 700pF @ 300V (5)
- 720pF @ 300V (2)
- 890pF @ 300V (4)
- Applied Filters :
77 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,156
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,860
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,319
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 35A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | - | 650V | 35A (Ta) | 95 mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,013
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,908
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,384
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 750 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
911
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,796
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
VIEW |
2,105
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A IPAK-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
VIEW |
808
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 720pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
774
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 7A (Ta) | 600 mOhm @ 3.5A, 10V | 3.7V @ 350µA | 15nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,343
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 6.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | Super Junction | 600V | 6.2A (Ta) | 820 mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,380
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A DTMOSIV | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220 | 40W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 40nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
963
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,355
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 230W (Tc) | N-Channel | Super Junction | 600V | 30.8A (Ta) | 88 mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | 3000pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
800
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
1,870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 390 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,185
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-3P | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
|
VIEW |
807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 165W (Tc) | N-Channel | - | 600V | 20A (Ta) | 155 mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,355
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,287
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
2,694
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
950
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
|
|
VIEW |
3,753
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
