- Manufacture :
- Series :
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- Package / Case :
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- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,949
In-stock
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ON Semiconductor | MOSFET N-CH 600V 20A TO-220 | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 208W (Tc) | N-Channel | - | 600V | 20A (Tc) | 190 mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,406
In-stock
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Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,626
In-stock
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ON Semiconductor | MOSFET N-CH 600V 20A TO-3P | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 208W (Tc) | N-Channel | - | 600V | 20A (Tc) | 190 mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,397
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 20A TO-3P | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 208W (Tc) | N-Channel | - | 600V | 20A (Tc) | 190 mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | 10V | ±30V |