Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FCP20N60
RFQ
VIEW
RFQ
3,949
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-220 SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
STP20NF06L
RFQ
VIEW
RFQ
2,409
In-stock
STMicroelectronics MOSFET N-CH 60V 20A TO-220 STripFET™ II Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel - 60V 20A (Tc) 70 mOhm @ 10A, 10V 4V @ 250µA 7.5nC @ 10V 400pF @ 25V 5V, 10V ±18V
IRF9310PBF
RFQ
VIEW
RFQ
2,406
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V
FCA20N60-F109
RFQ
VIEW
RFQ
1,626
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-3P SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCA20N60
RFQ
VIEW
RFQ
2,397
In-stock
ON Semiconductor MOSFET N-CH 600V 20A TO-3P SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V