- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
952
In-stock
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Infineon Technologies | MOSFET N-CH 25V 29A MX | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 168A (Tc) | 1.6 mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | 3480pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
2,263
In-stock
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Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
2,746
In-stock
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Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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631
In-stock
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Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 78W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
620
In-stock
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Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
2,426
In-stock
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Infineon Technologies | MOSFET N CH 25V 19A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.1W (Ta), 32W (Tc) | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
1,202
In-stock
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Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
3,178
In-stock
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Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
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VIEW |
854
In-stock
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Infineon Technologies | MOSFET N CH 25V 19A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.1W (Ta), 32W (Tc) | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | |||
