- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
-
- 2.1W (Ta), 20W (Tc) (2)
- 2.1W (Ta), 32W (Tc) (2)
- 2.1W (Ta), 42W (Tc) (1)
- 2.1W (Ta), 54W (Tc) (2)
- 2.1W (Ta), 69W (Tc) (1)
- 2.1W (Ta), 78W (Tc) (1)
- 23W (Tc) (1)
- 30.5W (Tc) (1)
- 43W (Tc) (1)
- 59.4W (Tc) (1)
- 6.2W (Tc) (1)
- 6.3W (Tc) (1)
- 6.5W (Tc) (1)
- 6.7W (Tc) (1)
- 6.9W (Tc) (1)
- 6W (Tc) (1)
- 7.1W (Tc) (1)
- 7.2W (Tc) (1)
- FET Feature :
- Rds On (Max) @ Id, Vgs :
-
- 1.1 mOhm @ 35A, 10V (1)
- 1.2 Ohm @ 900mA, 10V (1)
- 1.3 mOhm @ 33A, 10V (2)
- 1.4 Ohm @ 700mA, 10V (2)
- 1.6 mOhm @ 29A, 10V (1)
- 1.7 mOhm @ 28A, 10V (1)
- 2 Ohm @ 500mA, 10V (1)
- 3.7 mOhm @ 19A, 10V (2)
- 360 mOhm @ 3A, 10V (2)
- 450 mOhm @ 2.3A, 10V (1)
- 5.2 mOhm @ 16A, 10V (2)
- 600 mOhm @ 1.8A, 10V (2)
- 750 mOhm @ 1.4A, 10V (1)
- 900 mOhm @ 1.1A, 10V (2)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
21 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
952
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 29A MX | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 168A (Tc) | 1.6 mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | 3480pF @ 13V | 4.5V, 10V | ±16V | |||
|
VIEW |
2,263
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 28A S3 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S3C | DIRECTFET™ S3C | 2.1W (Ta), 42W (Tc) | N-Channel | - | 25V | 28A (Ta), 125A (Tc) | 1.7 mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | 4.5V, 10V | ±16V | |||
|
VIEW |
2,746
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
631
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 35A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 78W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 35A (Ta), 213A (Tc) | 1.1 mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | 5435pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
620
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
2,426
In-stock
|
Infineon Technologies | MOSFET N CH 25V 19A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.1W (Ta), 32W (Tc) | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | |||
|
VIEW |
1,471
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 12.5A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 59.4W (Tc) | N-Channel | - | 700V | 12.5A (Tc) | 360 mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | 517pF @ 400V | 10V | ±16V | |||
|
VIEW |
3,373
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 12.5A SOT223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 7.2W (Tc) | N-Channel | - | 700V | 12.5A (Tc) | 360 mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | 517pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
2,963
In-stock
|
Infineon Technologies | COOLMOS P7 700V SOT-223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 7.1W (Tc) | N-Channel | - | 700V | 10A (Tc) | 450 mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 10V | 424pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
3,461
In-stock
|
Infineon Technologies | COOLMOS P7 700V SOT-223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6.7W (Tc) | N-Channel | - | 700V | 6.5A (Tc) | 750 mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 10V | 306pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
664
In-stock
|
Infineon Technologies | COOLMOS P7 700V SOT-223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6.3W (Tc) | N-Channel | - | 700V | 4.5A (Tc) | 1.2 Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8nC @ 10V | 174pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
1,340
In-stock
|
Infineon Technologies | COOLMOS P7 700V SOT-223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6W (Tc) | N-Channel | - | 700V | 3A (Tc) | 2 Ohm @ 500mA, 10V | 3.5V @ 30µA | 3.8nC @ 10V | 130pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
1,202
In-stock
|
Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.1W (Ta), 54W (Tc) | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 160A (Tc) | 1.3 mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | 4160pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
3,178
In-stock
|
Infineon Technologies | MOSFET N CH 25V 16A S1 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric S1 | DIRECTFET S1 | 2.1W (Ta), 20W (Tc) | N-Channel | - | 25V | 16A (Ta), 50A (Tc) | 5.2 mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | 1038pF @ 13V | 4.5V, 10V | ±16V | |||
|
VIEW |
854
In-stock
|
Infineon Technologies | MOSFET N CH 25V 19A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | DIRECTFET™ SQ | 2.1W (Ta), 32W (Tc) | N-Channel | - | 25V | 19A (Ta), 74A (Tc) | 3.7 mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | 1590pF @ 13V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,139
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 6A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 30.5W (Tc) | N-Channel | - | 700V | 6A (Tc) | 900 mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
3,780
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 4A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 23W (Tc) | N-Channel | - | 700V | 4A (Tc) | 1.4 Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | 158pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
1,605
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 700V 6A SOT223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6.5W (Tc) | N-Channel | - | 700V | 6A (Tc) | 900 mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
987
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL 700V 4A SOT223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6.2W (Tc) | N-Channel | - | 700V | 4A (Tc) | 1.4 Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | 158pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
2,659
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 8.5A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 43W (Tc) | N-Channel | - | 700V | 8.5A (Tc) | 600 mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | 10V | ±16V | |||
|
|
VIEW |
1,180
In-stock
|
Infineon Technologies | MOSFET N-CH 700V 8.5A SOT223 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | PG-SOT223 | 6.9W (Tc) | N-Channel | - | 700V | 8.5A (Tc) | 600 mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | 364pF @ 400V | 10V | ±16V | |||
