Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 40V 19A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 89W (Tc) N-Channel - 40V 19A (Ta), 106A (Tc) 5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3765pF @ 20V 4.5V, 10V ±20V
IRF6714MTR1PBF
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3,994
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Infineon Technologies MOSFET N-CH 25V 29A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 89W (Tc) N-Channel - 25V 29A (Ta), 166A (Tc) 2.1 mOhm @ 29A, 10V 2.4V @ 100µA 44nC @ 4.5V 3890pF @ 13V 4.5V, 10V ±20V
SI7107DN-T1-E3
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1,374
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Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel - 20V 9.8A (Ta) 10.8 mOhm @ 15.3A, 4.5V 1V @ 450µA 44nC @ 4.5V - 1.8V, 4.5V ±8V
SI7107DN-T1-GE3
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1,309
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Vishay Siliconix MOSFET P-CH 20V 9.8A 1212-8 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 1.5W (Ta) P-Channel - 20V 9.8A (Ta) 10.8 mOhm @ 15.3A, 4.5V 1V @ 450µA 44nC @ 4.5V - 1.8V, 4.5V ±8V
IRF3711STRLPBF
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2,019
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Infineon Technologies MOSFET N-CH 20V 110A D2PAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 120W (Tc) N-Channel - 20V 110A (Tc) 6 mOhm @ 15A, 10V 3V @ 250µA 44nC @ 4.5V 2980pF @ 10V 4.5V, 10V ±20V
IRF6616TR1
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2,082
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Infineon Technologies MOSFET N-CH 30V 19A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.8W (Ta), 89W (Tc) N-Channel - 30V 19A (Ta), 106A (Tc) 5 mOhm @ 19A, 10V 2.25V @ 250µA 44nC @ 4.5V 3765pF @ 20V 4.5V, 10V ±20V