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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,078
In-stock
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Infineon Technologies | MOSFET N-CH 40V 19A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 40V | 19A (Ta), 106A (Tc) | 5 mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3765pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,994
In-stock
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Infineon Technologies | MOSFET N-CH 25V 29A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 25V | 29A (Ta), 166A (Tc) | 2.1 mOhm @ 29A, 10V | 2.4V @ 100µA | 44nC @ 4.5V | 3890pF @ 13V | 4.5V, 10V | ±20V | |||
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VIEW |
1,374
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 20V | 9.8A (Ta) | 10.8 mOhm @ 15.3A, 4.5V | 1V @ 450µA | 44nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
1,473
In-stock
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ON Semiconductor | MOSFET N-CH 90V 50A DPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 4W (Ta), 100W (Tc) | N-Channel | - | 90V | 10A (Ta), 50A (Tc) | 16.7 mOhm @ 20A, 10V | 2.5V @ 250µA | 44nC @ 4.5V | 4209pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,309
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 9.8A 1212-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 1.5W (Ta) | P-Channel | - | 20V | 9.8A (Ta) | 10.8 mOhm @ 15.3A, 4.5V | 1V @ 450µA | 44nC @ 4.5V | - | 1.8V, 4.5V | ±8V | |||
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VIEW |
2,019
In-stock
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Infineon Technologies | MOSFET N-CH 20V 110A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,082
In-stock
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Infineon Technologies | MOSFET N-CH 30V 19A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 19A (Ta), 106A (Tc) | 5 mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3765pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,782
In-stock
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Infineon Technologies | MOSFET N-CH 40V 19A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 40V | 19A (Ta), 106A (Tc) | 5 mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3765pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
2,449
In-stock
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Infineon Technologies | MOSFET N-CH 40V 10A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 40V | 10A (Ta) | 13 mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | 3430pF @ 20V | 2.8V, 10V | ±12V | |||
