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- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,731
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 5A TSMT8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 31 mOhm @ 5A, 10V | 2.5V @ 1mA | 28nC @ 10V | 1300pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A TSM | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 27.6 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,646
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
2,454
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | - | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
3,274
In-stock
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Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V |