- Part Status :
- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 117 mOhm @ 1A, 10V (1)
- 150 mOhm @ 4.5A, 4.5V (1)
- 180 mOhm @ 1.3A, 10V (1)
- 200 mOhm @ 1.7A, 10V (1)
- 240 mOhm @ 1.4A, 10V (2)
- 26 mOhm @ 6.1A, 10V (1)
- 27.6 mOhm @ 4A, 10V (1)
- 28 mOhm @ 3A, 10V (2)
- 31 mOhm @ 5A, 10V (1)
- 35 mOhm @ 2A, 4.5V (1)
- 38 mOhm @ 5.8A, 10V (1)
- 45 mOhm @ 4.4A, 10V (1)
- 50 mOhm @ 3.4A, 10V (1)
- 53 mOhm @ 3A, 10V (1)
- 59 mOhm @ 2.5A, 10V (1)
- 71 mOhm @ 2A, 4V (1)
- 72 mOhm @ 4.2A, 10V (1)
- 75 mOhm @ 2.5A, 10V (1)
- 77 mOhm @ 4.2A, 10V (2)
- 83 mOhm @ 1.5A, 10V (1)
- 85 mOhm @ 1.35A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1300pF @ 10V (1)
- 1500pF @ 24V (1)
- 1760pF @ 10V (1)
- 180pF @ 10V (1)
- 180pF @ 15V (1)
- 193pF @ 10V (1)
- 215pF @ 15V (1)
- 270pF @ 10V (2)
- 280pF @ 15V (1)
- 413pF @ 15V (1)
- 424pF @ 5V (1)
- 432pF @ 15V (1)
- 450pF @ 15V (1)
- 480pF @ 10V (1)
- 490pF @ 10V (1)
- 565pF @ 10V (1)
- 650pF @ 15V (1)
- 708pF @ 15V (1)
- 70pF @ 10V (2)
- 710pF @ 15V (1)
- 864pF @ 15V (1)
- 970pF @ 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
24 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,070
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSVI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | 970pF @ 10V | 4.5V, 10V | +20V, -25V | |||
|
VIEW |
1,096
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
836
In-stock
|
Vishay Siliconix | MOSFET P-CH 30V 1.49A SOT23-3 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | P-Channel | - | 30V | 1.49A (Ta) | 200 mOhm @ 1.7A, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | 4.5V, 10V | ±20V | |||
.JPG)
|
VIEW |
1,698
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 6A VS-8 | U-MOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 3A, 10V | 2V @ 1mA | 34nC @ 10V | 1760pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,835
In-stock
|
ON Semiconductor | MOSFET P-CH 30V 3.3A CHIPFET | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 700mW (Ta) | P-Channel | - | 30V | 3.3A (Ta) | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 28nC @ 10V | 1500pF @ 24V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,731
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 5A TSMT8 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 31 mOhm @ 5A, 10V | 2.5V @ 1mA | 28nC @ 10V | 1300pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
3,678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 3A (Ta) | 71 mOhm @ 2A, 4V | - | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 4V | ±12V | |||
|
|
VIEW |
3,523
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | - | 413pF @ 15V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,584
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.9A TSM | π-MOSVII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
3,588
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 4A (Ta) | 53 mOhm @ 3A, 10V | 1V @ 1mA | 4.3nC @ 4V | 270pF @ 10V | 1.8V, 10V | ±12V | |||
|
|
VIEW |
1,375
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A TSM | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 27.6 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
.jpg)
|
VIEW |
3,646
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
2,454
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | - | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
729
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 3.6A 6-WDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | N-Channel | - | 30V | 3.6A (Ta) | 35 mOhm @ 2A, 4.5V | 1V @ 250µA | 13nC @ 4.5V | 650pF @ 15V | 1.8V, 4.5V | ±12V | |||
|
VIEW |
2,350
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 3.5A SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 700mW (Ta) | P-Channel | - | 30V | 3.5A (Ta) | 77 mOhm @ 4.2A, 10V | 1.3V @ 250µA | 12nC @ 10V | 432pF @ 15V | 2.5V, 10V | ±12V | |||
|
|
VIEW |
1,461
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 2A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 700mW (Ta) | N-Channel | - | 30V | 2A (Ta) | 150 mOhm @ 4.5A, 4.5V | 1V @ 250µA | - | 193pF @ 10V | 1.5V, 4.5V | ±12V | |||
|
|
VIEW |
3,412
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V | |||
|
VIEW |
3,925
In-stock
|
ON Semiconductor | PT8 N 30V/20V, MOSFET | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SuperSOT™-6 | 700mW (Ta) | N-Channel | - | 30V | 6.1A (Ta) | 26 mOhm @ 6.1A, 10V | 3V @ 250µA | 10.8nC @ 10V | 710pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,456
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 3.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 700mW (Ta) | P-Channel | - | 30V | 3.3A (Ta) | 72 mOhm @ 4.2A, 10V | 1.3V @ 250µA | 15.9nC @ 10V | 708pF @ 15V | 1.8V, 10V | ±12V | |||
|
|
VIEW |
3,276
In-stock
|
Vishay Siliconix | MOSFET N-CH 30V 2.9A SOT23-3 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | N-Channel | - | 30V | 2.9A (Ta) | 50 mOhm @ 3.4A, 10V | 800mV @ 250µA (Min) | 7nC @ 10V | 215pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,274
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
890
In-stock
|
Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 1.3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 700mW (Ta) | P-Channel | - | 30V | 1.3A (Ta) | 180 mOhm @ 1.3A, 10V | 3V @ 250µA | 3.2nC @ 4.5V | 565pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,050
In-stock
|
Diodes Incorporated | MOSFET P-CH 30V 3.5A SOT23 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 700mW (Ta) | P-Channel | - | 30V | 3.5A (Ta) | 77 mOhm @ 4.2A, 10V | 1.3V @ 250µA | 24nC @ 10V | 864pF @ 15V | 2.5V, 10V | ±12V | |||
|
|
VIEW |
3,170
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 5.8A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 700mW (Ta) | N-Channel | - | 30V | 5.8A (Ta) | 38 mOhm @ 5.8A, 10V | 2.2V @ 250µA | - | 424pF @ 5V | 4.5V, 10V | ±20V | |||
