- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,763
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 60V 18A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 20W (Tc) | P-Channel | - | 60V | 18A (Tc) | 68 mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | 870pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
3,747
In-stock
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Vishay Siliconix | MOSFET P-CH 40V 18A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 39W (Tc) | P-Channel | - | 40V | 18A (Tc) | 25 mOhm @ 9.3A, 10V | 3V @ 250µA | 62nC @ 10V | 1980pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,818
In-stock
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Vishay Siliconix | MOSFET P-CH 30V 18A PPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.7W (Ta), 52W (Tc) | P-Channel | - | 30V | 18A (Tc) | 9.4 mOhm @ 15A, 10V | 2.5V @ 250µA | 110nC @ 10V | 4280pF @ 15V | 4.5V, 10V | ±20V | |||
