Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFR5505GTRPBF
RFQ
VIEW
RFQ
942
In-stock
Infineon Technologies MOSFET P-CH 55V 18A DPAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V
SIS447DN-T1-GE3
RFQ
VIEW
RFQ
3,737
In-stock
Vishay Siliconix MOSFET P-CH 20V 18A POWERPAK1212 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 52W (Tc) P-Channel - 20V 18A (Tc) 7.1 mOhm @ 20A, 10V 1.2V @ 250µA 181nC @ 10V 5590pF @ 10V 2.5V, 10V ±12V
IRF9Z34STRRPBF
RFQ
VIEW
RFQ
2,912
In-stock
Vishay Siliconix MOSFET P-CH 60V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel - 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 10V ±20V
IRF9Z34STRLPBF
RFQ
VIEW
RFQ
3,515
In-stock
Vishay Siliconix MOSFET P-CH 60V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 88W (Tc) P-Channel - 60V 18A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 1100pF @ 25V 10V ±20V
RQ3E075ATTB
RFQ
VIEW
RFQ
3,643
In-stock
Rohm Semiconductor MOSFET P-CHANNEL 30V 18A 8HSMT - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 15W (Tc) P-Channel - 30V 18A (Tc) 23 mOhm @ 7.5A, 10V 2.5V @ 1mA 10.4nC @ 4.5V 930pF @ 15V 10V ±20V
TSM680P06CP ROG
RFQ
VIEW
RFQ
1,763
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 60V 18A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 20W (Tc) P-Channel - 60V 18A (Tc) 68 mOhm @ 6A, 10V 2.2V @ 250µA 16.4nC @ 10V 870pF @ 30V 4.5V, 10V ±20V
SI7611DN-T1-GE3
RFQ
VIEW
RFQ
3,747
In-stock
Vishay Siliconix MOSFET P-CH 40V 18A 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.7W (Ta), 39W (Tc) P-Channel - 40V 18A (Tc) 25 mOhm @ 9.3A, 10V 3V @ 250µA 62nC @ 10V 1980pF @ 20V 4.5V, 10V ±20V
SIS413DN-T1-GE3
RFQ
VIEW
RFQ
3,818
In-stock
Vishay Siliconix MOSFET P-CH 30V 18A PPAK 1212-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) P-Channel - 30V 18A (Tc) 9.4 mOhm @ 15A, 10V 2.5V @ 250µA 110nC @ 10V 4280pF @ 15V 4.5V, 10V ±20V
SIS407ADN-T1-GE3
RFQ
VIEW
RFQ
752
In-stock
Vishay Siliconix MOSFET P-CH 20V 18A 1212-8 PPAK TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 PowerPAK® 1212-8 3.7W (Ta), 39.1W (Tc) P-Channel - 20V 18A (Tc) 9 mOhm @ 15A, 4.5V 1V @ 250µA 168nC @ 8V 5875pF @ 10V 1.8V, 4.5V ±8V
IRFR5505TRPBF
RFQ
VIEW
RFQ
2,486
In-stock
Infineon Technologies MOSFET P-CH 55V 18A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V