Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TSM2N60SCW RPG
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
XR46000ESETR
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2,804
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Exar Corporation MOSFET N-CH 600V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 20W (Tc) N-Channel - 600V 1.5A (Tc) 8 Ohm @ 750mA, 10V 4V @ 250µA 7.5nC @ 10V 170pF @ 25V 10V ±30V
FQT1N60CTF-WS
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2,087
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ON Semiconductor MOSFET N-CH 600V 0.2A SOT-223-4 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.1W (Tc) N-Channel - 600V 200mA (Tc) 11.5 Ohm @ 100mA, 10V 4V @ 250µA 6.2nC @ 10V 170pF @ 25V 10V ±30V