Supplier Device Package :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSP125H6433XTMA1
RFQ
VIEW
RFQ
3,318
In-stock
Infineon Technologies MOSFET N-CH 600V 120MA SOT223 SIPMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 120mA (Ta) - 2.3V @ 94µA 6.6nC @ 10V 150pF @ 25V 4.5V, 10V ±20V
TSM2N60SCW RPG
RFQ
VIEW
RFQ
1,709
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
BSP135H6327XTSA1
RFQ
VIEW
RFQ
3,632
In-stock
Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 1.8W (Ta) N-Channel Depletion Mode 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 1V @ 94µA 4.9nC @ 5V 146pF @ 25V 0V, 10V ±20V
STN1HNK60
RFQ
VIEW
RFQ
2,988
In-stock
STMicroelectronics MOSFET N-CH 600V 400MA SOT223 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Tc) N-Channel - 600V 400mA (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 10V ±30V
CPC3960ZTR
RFQ
VIEW
RFQ
1,745
In-stock
IXYS Integrated Circuits Division MOSFET N-CH 600V SOT-223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 125°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel Depletion Mode 600V - 44 Ohm @ 100mA, 0V - - 100pF @ 25V 0V ±15V
TSM1NB60CW RPG
RFQ
VIEW
RFQ
1,845
In-stock
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 1A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 39W (Tc) N-Channel - 600V 1A (Tc) 10 Ohm @ 500mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
XR46000ESETR
RFQ
VIEW
RFQ
2,804
In-stock
Exar Corporation MOSFET N-CH 600V 1.5A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 20W (Tc) N-Channel - 600V 1.5A (Tc) 8 Ohm @ 750mA, 10V 4V @ 250µA 7.5nC @ 10V 170pF @ 25V 10V ±30V
BSP125H6327XTSA1
RFQ
VIEW
RFQ
2,217
In-stock
Infineon Technologies MOSFET N-CH 600V 120MA SOT-223 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 120mA (Ta) 45 Ohm @ 120mA, 10V 2.3V @ 94µA 6.6nC @ 10V 150pF @ 25V 4.5V, 10V ±20V
FQT1N60CTF-WS
RFQ
VIEW
RFQ
2,087
In-stock
ON Semiconductor MOSFET N-CH 600V 0.2A SOT-223-4 QFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.1W (Tc) N-Channel - 600V 200mA (Tc) 11.5 Ohm @ 100mA, 10V 4V @ 250µA 6.2nC @ 10V 170pF @ 25V 10V ±30V
STN1NK60Z
RFQ
VIEW
RFQ
2,659
In-stock
STMicroelectronics MOSFET N-CH 600V 300MA SOT223 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 3.3W (Tc) N-Channel - 600V 300mA (Tc) 15 Ohm @ 400mA, 10V 4.5V @ 50µA 6.9nC @ 10V 94pF @ 25V 10V ±30V