- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
878
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
1,173
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 32A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | 1050pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
2,565
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | - | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 11A (Ta) | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | 345pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
3,289
In-stock
|
EPC | TRANS GAN 200V 22A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (7-Solder Bar) | N-Channel | - | 200V | 22A (Ta) | 25 mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
3,004
In-stock
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V | ||||
VIEW |
1,857
In-stock
|
EPC | TRANS GAN 200V 5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (4-Solder Bar) | N-Channel | - | 200V | 5A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | 140pF @ 100V | 5V | +6V, -4V |