- Manufacture :
- Series :
- Part Status :
- Technology :
- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
878
In-stock
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,271
In-stock
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | |||
|
VIEW |
3,575
In-stock
|
EPC | TRANS GAN 200V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,722
In-stock
|
STMicroelectronics | MOSFET N-CH 200V 5A DPAK | STripFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 33W (Tc) | N-Channel | - | 200V | 5A (Tc) | 700 mOhm @ 2.5A, 5V | 2.5V @ 50µA | 6nC @ 5V | 242pF @ 25V | 5V | ±20V | |||
|
VIEW |
1,173
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 32A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 10.2nC @ 5V | 1050pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,225
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 1.13A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2W (Tc) | N-Channel | - | 200V | 1.13A (Ta) | 800 mOhm @ 570mA, 5V | - | 15nC @ 5V | 430pF @ 25V | 5V | ±20V | |||
|
|
VIEW |
1,941
In-stock
|
EPC | TRANS GAN 200V 48A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 48A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | 950pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
2,565
In-stock
|
EPC | TRANS GAN 200V BUMPED DIE | - | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 11A (Ta) | 25 mOhm @ 20A, 5V | 2.5V @ 7mA | 3.6nC @ 5V | 345pF @ 100V | 5V | +6V, -4V | |||
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|
VIEW |
3,289
In-stock
|
EPC | TRANS GAN 200V 22A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (7-Solder Bar) | - | N-Channel | - | 200V | 22A (Ta) | 25 mOhm @ 12A, 5V | 2.5V @ 3mA | 5.3nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | |||
|
VIEW |
3,004
In-stock
|
EPC | TRANS GAN 200V 8.5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 200V | 8.5A (Ta) | 50 mOhm @ 7A, 5V | 2.5V @ 1.5mA | 2.5nC @ 5V | 270pF @ 100V | 5V | +6V, -4V | |||
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|
VIEW |
1,857
In-stock
|
EPC | TRANS GAN 200V 5A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (4-Solder Bar) | - | N-Channel | - | 200V | 5A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3nC @ 5V | 140pF @ 100V | 5V | +6V, -4V | |||
