- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,896
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 263W (Tc) | N-Channel | 100V | 100A (Tc) | 8.1 mOhm @ 25A, 10V | 4V @ 1mA | 108nC @ 10V | 7380pF @ 25V | 10V | ±20V | |||
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VIEW |
1,362
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 269W (Tc) | N-Channel | 100V | 100A (Tc) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 10V | ±20V | |||
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VIEW |
3,270
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 306W (Tc) | N-Channel | 100V | 100A (Tc) | 5.6 mOhm @ 25A, 10V | 4V @ 1mA | 141nC @ 10V | 8061pF @ 50V | 10V | ±20V |