- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,847
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 156W (Tc) | N-Channel | 100V | 100A (Tc) | 3.5 mOhm @ 50A, 10V | 3.8V @ 115µA | 87nC @ 10V | 6500pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
2,359
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 214W (Tc) | N-Channel | 100V | 100A (Tc) | 4.2 mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,896
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 263W (Tc) | N-Channel | 100V | 100A (Tc) | 8.1 mOhm @ 25A, 10V | 4V @ 1mA | 108nC @ 10V | 7380pF @ 25V | 10V | ±20V | |||
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VIEW |
3,768
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 100A TO-263 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 375W (Tc) | N-Channel | 100V | 100A (Tc) | 10.5 mOhm @ 30A, 10V | 2.5V @ 250µA | 185nC @ 10V | 8050pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,362
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 269W (Tc) | N-Channel | 100V | 100A (Tc) | 6.8 mOhm @ 15A, 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | 10V | ±20V | |||
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VIEW |
792
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A 8TDSON | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 139W (Tc) | N-Channel | 100V | 100A (Tc) | 4 mOhm @ 50A, 10V | 3.8V @ 95µA | 72nC @ 10V | 5300pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
617
In-stock
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Texas Instruments | MOSFET N-CH 100V 100A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 3.3W (Ta), 125W (Tc) | N-Channel | 100V | 100A (Tc) | 6.4 mOhm @ 16A, 10V | 3.3V @ 250µA | 48nC @ 10V | 3870pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,270
In-stock
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Nexperia USA Inc. | MOSFET N-CH 100V 100A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 306W (Tc) | N-Channel | 100V | 100A (Tc) | 5.6 mOhm @ 25A, 10V | 4V @ 1mA | 141nC @ 10V | 8061pF @ 50V | 10V | ±20V | |||
