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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	STU6NF10	RFQ VIEW	PDF RFQ	1,752 In-stock	STMicroelectronics	MOSFET N-CH 100V 6A IPAK		STripFET™	Active	Tube	MOSFET (Metal Oxide)	-65°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	30W (Tc)	N-Channel	-	100V	6A (Tc)	250 mOhm @ 3A, 10V	4V @ 250µA	14nC @ 10V	280pF @ 25V	10V	±20V
	IRFU9120PBF	RFQ VIEW	PDF RFQ	2,270 In-stock	Vishay Siliconix	MOSFET P-CH 100V 5.6A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	P-Channel	-	100V	5.6A (Tc)	600 mOhm @ 3.4A, 10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	10V	±20V
	IRFU3910PBF	RFQ VIEW	PDF RFQ	2,935 In-stock	Infineon Technologies	MOSFET N-CH 100V 16A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	79W (Tc)	N-Channel	-	100V	16A (Tc)	115 mOhm @ 10A, 10V	4V @ 250µA	44nC @ 10V	640pF @ 25V	10V	±20V
	IRFU120NPBF	RFQ VIEW	PDF RFQ	2,848 In-stock	Infineon Technologies	MOSFET N-CH 100V 9.4A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	48W (Tc)	N-Channel	-	100V	9.4A (Tc)	210 mOhm @ 5.6A, 10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	10V	±20V
	FQU8P10TU	RFQ VIEW	PDF RFQ	3,250 In-stock	ON Semiconductor	MOSFET P-CH 100V 6.6A IPAK		QFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK	2.5W (Ta), 44W (Tc)	P-Channel	-	100V	6.6A (Tc)	530 mOhm @ 3.3A, 10V	4V @ 250µA	15nC @ 10V	470pF @ 25V	10V	±30V
	IRFU9110PBF	RFQ VIEW	PDF RFQ	1,660 In-stock	Vishay Siliconix	MOSFET P-CH 100V 3.1A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 25W (Tc)	P-Channel	-	100V	3.1A (Tc)	1.2 Ohm @ 1.9A, 10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	10V	±20V
	IRFU110PBF	RFQ VIEW	PDF RFQ	1,313 In-stock	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	25W (Tc)	N-Channel	-	100V	4.3A (Tc)	540 mOhm @ 900mA, 10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	10V	±20V
	IRFU3410PBF	RFQ VIEW	PDF RFQ	3,324 In-stock	Infineon Technologies	MOSFET N-CH 100V 31A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	3W (Ta), 110W (Tc)	N-Channel	-	100V	31A (Tc)	39 mOhm @ 18A, 10V	4V @ 250µA	56nC @ 10V	1690pF @ 25V	10V	±20V
	IRFU120PBF	RFQ VIEW	PDF RFQ	3,728 In-stock	Vishay Siliconix	MOSFET N-CH 100V 7.7A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	N-Channel	-	100V	7.7A (Tc)	270 mOhm @ 4.6A, 10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	10V	±20V
	IRFU5410PBF	RFQ VIEW	PDF RFQ	1,850 In-stock	Infineon Technologies	MOSFET P-CH 100V 13A I-PAK		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	66W (Tc)	P-Channel	-	100V	13A (Tc)	205 mOhm @ 7.8A, 10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	10V	±20V

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