- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.2 Ohm @ 1.9A, 10V (1)
- 105 mOhm @ 10A, 10V (1)
- 115 mOhm @ 10A, 10V (1)
- 125 mOhm @ 8A, 10V (1)
- 13.9 mOhm @ 38A, 10V (1)
- 14 mOhm @ 38A, 10V (1)
- 180 mOhm @ 5A, 10V (1)
- 185 mOhm @ 6A, 10V (1)
- 205 mOhm @ 7.8A, 10V (1)
- 210 mOhm @ 5.6A, 10V (1)
- 250 mOhm @ 3A, 10V (1)
- 270 mOhm @ 4.6A, 10V (1)
- 28.5 mOhm @ 21A, 10V (1)
- 33 mOhm @ 18A, 10V (1)
- 39 mOhm @ 18A, 10V (1)
- 52 mOhm @ 14A, 10V (1)
- 530 mOhm @ 3.3A, 10V (1)
- 540 mOhm @ 2.6A, 5V (2)
- 540 mOhm @ 900mA, 10V (1)
- 600 mOhm @ 3.4A, 10V (1)
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1690pF @ 25V (2)
- 180pF @ 25V (1)
- 200pF @ 25V (1)
- 2300pF @ 10V (1)
- 250pF @ 25V (2)
- 280pF @ 25V (1)
- 3031pF @ 50V (1)
- 330pF @ 25V (1)
- 3600pF @ 10V (1)
- 360pF @ 25V (1)
- 390pF @ 25V (1)
- 3980pF @ 25V (1)
- 440pF @ 25V (1)
- 470pF @ 25V (1)
- 520pF @ 25V (1)
- 640pF @ 25V (1)
- 760pF @ 25V (1)
- 800pF @ 25V (1)
- 900pF @ 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
22 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,207
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V MP-3/TO-251 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 1W (Ta), 40W (Tc) | N-Channel | - | 100V | 28A (Ta) | 52 mOhm @ 14A, 10V | - | 49nC @ 10V | 2300pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,945
In-stock
|
Infineon Technologies | MOSFET N CH 100V 56A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 143W (Tc) | N-Channel | - | 100V | 56A (Tc) | 13.9 mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | 3031pF @ 50V | 10V | ±20V | |||
|
VIEW |
3,781
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 4.3A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | - | 100V | 4.3A (Tc) | 540 mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
|
|
VIEW |
3,654
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V MP-3/TO-251 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 1W (Ta), 50W (Tc) | N-Channel | - | 100V | 36A (Ta) | 33 mOhm @ 18A, 10V | - | 72nC @ 10V | 3600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,267
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V MP-3/TO-251 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (MP-3) | 1W (Ta), 30W (Tc) | N-Channel | - | 100V | 16A (Tc) | 125 mOhm @ 8A, 10V | - | 20nC @ 10V | 900pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,752
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 6A IPAK | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 30W (Tc) | N-Channel | - | 100V | 6A (Tc) | 250 mOhm @ 3A, 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,270
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 5.6A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,935
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 16A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 100V | 16A (Tc) | 115 mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,336
In-stock
|
Infineon Technologies | MOSFET N CH 100V 35A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 91W (Tc) | N-Channel | - | 100V | 35A (Tc) | 28.5 mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,848
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 9.4A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 48W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,250
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 6.6A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 44W (Tc) | P-Channel | - | 100V | 6.6A (Tc) | 530 mOhm @ 3.3A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,283
In-stock
|
STMicroelectronics | MOSFET N-CHANNEL 100V 25A IPAK | STripFET™ F7 | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | - | N-Channel | - | 100V | 25A | - | - | - | - | 4.5V, 10V | - | |||
|
|
VIEW |
3,125
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 4.3A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | - | 100V | 4.3A (Tc) | 540 mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
|
|
VIEW |
1,168
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | |||
|
|
VIEW |
1,660
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 3.1A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | - | 100V | 3.1A (Tc) | 1.2 Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,313
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 4.3A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 25W (Tc) | N-Channel | - | 100V | 4.3A (Tc) | 540 mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,324
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 31A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 3W (Ta), 110W (Tc) | N-Channel | - | 100V | 31A (Tc) | 39 mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | 1690pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,585
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 17A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 79W (Tc) | N-Channel | - | 100V | 17A (Tc) | 105 mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
742
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 10A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 48W (Tc) | N-Channel | - | 100V | 10A (Tc) | 185 mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | 4V, 10V | ±16V | |||
|
|
VIEW |
879
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 10A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 40W (Tc) | N-Channel | - | 100V | 10A (Tc) | 180 mOhm @ 5A, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | 5V, 10V | ±20V | |||
|
|
VIEW |
3,728
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 7.7A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | - | 100V | 7.7A (Tc) | 270 mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,850
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 13A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 66W (Tc) | P-Channel | - | 100V | 13A (Tc) | 205 mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | 760pF @ 25V | 10V | ±20V | |||
