Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BFL4001-1E
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ON Semiconductor MOSFET N-CH 900V 4.1A - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 37W (Tc) N-Channel 900V 4.1A (Tc) 2.7 Ohm @ 3.25A, 10V - 44nC @ 10V 850pF @ 30V 10V ±30V
IRFBE30S
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1,582
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Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFBE30L
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2,081
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
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1,475
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ON Semiconductor MOSFET N-CH 900V 4.1A TO-3PF QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 90W (Tc) N-Channel 900V 4.1A (Tc) 2.3 Ohm @ 2.05A, 10V 5V @ 250µA 40nC @ 10V 1550pF @ 25V 10V ±30V
IRFBE30
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2,635
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFPE30
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3,455
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
NDD04N60Z-1G
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1,655
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ON Semiconductor MOSFET N-CH 600V 4A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 83W (Tc) N-Channel 600V 4.1A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 29nC @ 10V 640pF @ 25V 10V ±30V
IRFI620
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630
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Vishay Siliconix MOSFET N-CH 200V 4.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 200V 4.1A (Tc) 800 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFI620GPBF
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3,173
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Vishay Siliconix MOSFET N-CH 200V 4.1A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 200V 4.1A (Tc) 800 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFI620G
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943
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Vishay Siliconix MOSFET N-CH 200V 4.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) N-Channel 200V 4.1A (Tc) 800 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFBE30LPBF
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2,035
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IPA50R800CEXKSA2
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821
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Infineon Technologies MOSFET N-CH 500V 4.1A TO-220FP CoolMOS™ CE Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 26.4W (Tc) N-Channel 500V 4.1A (Tc) 800 mOhm @ 1.5A, 13V 3.5V @ 130µA 12.4nC @ 10V 280pF @ 100V 13V ±20V
IRFBE30SPBF
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2,745
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Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFPE30PBF
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2,575
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V
IRFBE30PBF
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1,188
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Vishay Siliconix MOSFET N-CH 800V 4.1A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 800V 4.1A (Tc) 3 Ohm @ 2.5A, 10V 4V @ 250µA 78nC @ 10V 1300pF @ 25V 10V ±20V