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IRFI620G

Discrete Semiconductor Products TO-220-3 Full Pack, Isolated Tab

Manufacturer No:: IRFI620G

Manufacturer:: Vishay Siliconix

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 200V 4.1A TO220FP

RoHs Status:

Datasheet:: IRFI620G Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :	4.1A (Tc)	Drain to Source Voltage (Vdss) :	200V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	260pF @ 25V	Mounting Type :	Through Hole
Operating Temperature :	-55°C ~ 150°C (TJ)	Package / Case :	TO-220-3 Full Pack, Isolated Tab
Packaging :	Tube	Part Status :	Obsolete
Power Dissipation (Max) :	30W (Tc)	Rds On (Max) @ Id, Vgs :	800 mOhm @ 2.5A, 10V
Series :	-	Supplier Device Package :	TO-220-3
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±20V
Vgs(th) (Max) @ Id :	4V @ 250µA

IRFI620G has the following characteristics

IRFI620Gis produced byVishay Siliconix, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-220-3 Full Pack, Isolated Tab, and Tube is its most common packaging method, which belongs to the - series, using TO-220-3.

IRFI620G Product Detail:

IRFI620G is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by Vishay Siliconix. The IRFI620G produced by Vishay Siliconix can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The IRFI620G of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the IRFI620G Datasheet （PDF)， IRFI620G price, IRFI620G pinout, IRFI620G manual, and IRFI620G replacement Solution.

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