- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,796
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,519
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,940
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V |