Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,796
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 Automotive, AEC-Q101, SIPMOS® Obsolete - MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3 300W (Tc) N-Channel - 55V 80A (Tc) 8 mOhm @ 80A, 10V 4V @ 240µA 187nC @ 10V 3660pF @ 25V 10V ±20V
IPP100N10S305AKSA1
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3,519
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Infineon Technologies MOSFET N-CH 100V 100A TO220-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 300W (Tc) N-Channel - 100V 100A (Tc) 5.1 mOhm @ 100A, 10V 4V @ 240µA 176nC @ 10V 11570pF @ 25V 10V ±20V
IPP65R225C7XKSA1
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1,940
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Infineon Technologies MOSFET N-CH 650V 11A TO-220-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 63W (Tc) N-Channel - 650V 11A (Tc) 225 mOhm @ 4.8A, 10V 4V @ 240µA 20nC @ 10V 996pF @ 400V 10V ±20V