- Packaging :
- Operating Temperature :
- Mounting Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
33 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,455
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A I2PAK | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,852
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 7.7 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,026
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,284
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,014
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | OptiMOS™ | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.8 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,796
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | Automotive, AEC-Q101, SIPMOS® | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8 mOhm @ 80A, 10V | 4V @ 240µA | 187nC @ 10V | 3660pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,116
In-stock
|
Infineon Technologies | MOSFET N-CH 650V TO220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 29W (Tc) | N-Channel | - | 650V | 7A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,680
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,843
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,142
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,566
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-263-3 | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
3,998
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
843
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
3,894
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO252-3 | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,234
In-stock
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
684
In-stock
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,244
In-stock
|
Infineon Technologies | HIGH POWER_NEW | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8-2 | 97W (Tc) | N-Channel | - | 650V | 14A (Tc) | 195 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,110
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,481
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,637
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
720
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,006
In-stock
|
Infineon Technologies | MOSFET N-CH 120V 100A TO263-3 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 300W (Tc) | N-Channel | - | 120V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 185nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,343
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
1,185
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
3,264
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 10A 4VSON | CoolMOS™ C7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | 67W (Tc) | N-Channel | - | 650V | 10A (Tc) | 230 mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V | |||
|
VIEW |
2,839
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,615
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
1,807
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
|
VIEW |
3,519
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 | OptiMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.1 mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | 11570pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,940
In-stock
|
Infineon Technologies | MOSFET N-CH 650V 11A TO-220-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 63W (Tc) | N-Channel | - | 650V | 11A (Tc) | 225 mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | 996pF @ 400V | 10V | ±20V |