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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,839
In-stock
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Texas Instruments | MOSFET P-CH 8V 9DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, DSBGA | 9-DSBGA | 1.7W (Ta) | P-Channel | - | 8V | 5A (Ta) | 9.9 mOhm @ 2A, 4.5V | 950mV @ 250µA | 24.6nC @ 4.5V | 1130pF @ 4V | 2.5V, 4.5V | -6V | |||
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VIEW |
1,601
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.2A SOT23-3 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | P-Channel | - | 20V | 2.2A (Ta) | 100 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 375pF @ 6V | 2.5V, 4.5V | ±8V | |||
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VIEW |
3,029
In-stock
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Vishay Siliconix | MOSFET P-CH 20V 2.2A SOT23-3 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 700mW (Ta) | P-Channel | - | 20V | 2.2A (Ta) | 100 mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10nC @ 4.5V | 375pF @ 6V | 2.5V, 4.5V | ±8V |