Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
CSD22204W
RFQ
VIEW
RFQ
899
In-stock
Texas Instruments MOSFET P-CH 8V 5A NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.7W (Ta) P-Channel - 8V 5A (Ta) 9.9 mOhm @ 2A, 4.5V 950mV @ 250µA 24.6nC @ 4.5V 1130pF @ 4V 2.5V, 4.5V -6V
CSD22204WT
RFQ
VIEW
RFQ
2,839
In-stock
Texas Instruments MOSFET P-CH 8V 9DSBGA NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.7W (Ta) P-Channel - 8V 5A (Ta) 9.9 mOhm @ 2A, 4.5V 950mV @ 250µA 24.6nC @ 4.5V 1130pF @ 4V 2.5V, 4.5V -6V
CSD22204WT
RFQ
VIEW
RFQ
1,677
In-stock
Texas Instruments MOSFET P-CH 8V 9DSBGA NexFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.7W (Ta) P-Channel - 8V 5A (Ta) 9.9 mOhm @ 2A, 4.5V 950mV @ 250µA 24.6nC @ 4.5V 1130pF @ 4V 2.5V, 4.5V -6V
CSD22204WT
RFQ
VIEW
RFQ
3,331
In-stock
Texas Instruments MOSFET P-CH 8V 9DSBGA NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-UFBGA, DSBGA 9-DSBGA 1.7W (Ta) P-Channel - 8V 5A (Ta) 9.9 mOhm @ 2A, 4.5V 950mV @ 250µA 24.6nC @ 4.5V 1130pF @ 4V 2.5V, 4.5V -6V
SI2301BDS-T1-GE3
RFQ
VIEW
RFQ
1,601
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
RFQ
VIEW
RFQ
1,752
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
RFQ
VIEW
RFQ
3,591
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
RFQ
VIEW
RFQ
3,029
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
RFQ
VIEW
RFQ
1,994
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
RFQ
VIEW
RFQ
3,005
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel - 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V