- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,210
In-stock
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Vishay Siliconix | MOSFET N-CH 300V 6.1A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | - | 300V | 6.1A (Tc) | 750 mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | 430pF @ 25V | 10V | ±30V | |||
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VIEW |
3,998
In-stock
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Vishay Siliconix | MOSFET N-CH 300V 6.1A D2PAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | - | 300V | 6.1A (Tc) | 750 mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | 430pF @ 25V | 10V | ±30V | |||
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VIEW |
1,097
In-stock
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ON Semiconductor | MOSFET N-CH 200V 1.13A SOT-223 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2W (Tc) | N-Channel | - | 200V | 1.13A (Ta) | 800 mOhm @ 570mA, 5V | - | 15nC @ 5V | 430pF @ 25V | 5V | ±20V | |||
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VIEW |
3,931
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 9A LPT | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (D2PAK) | 40W (Tc) | N-Channel | - | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | 10V | ±20V | |||
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VIEW |
2,874
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V | |||
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VIEW |
2,831
In-stock
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Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | Depletion Mode | 200V | 660mA (Ta) | 1.8 Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | 0V, 10V | ±20V |