Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF737LCSTRR
RFQ
VIEW
RFQ
2,210
In-stock
Vishay Siliconix MOSFET N-CH 300V 6.1A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel - 300V 6.1A (Tc) 750 mOhm @ 3.7A, 10V 4V @ 250µA 17nC @ 10V 430pF @ 25V 10V ±30V
IRF737LCSTRL
RFQ
VIEW
RFQ
3,998
In-stock
Vishay Siliconix MOSFET N-CH 300V 6.1A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel - 300V 6.1A (Tc) 750 mOhm @ 3.7A, 10V 4V @ 250µA 17nC @ 10V 430pF @ 25V 10V ±30V
FQD5P20TM
RFQ
VIEW
RFQ
3,060
In-stock
ON Semiconductor MOSFET P-CH 200V 3.7A DPAK QFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 45W (Tc) P-Channel - 200V 3.7A (Tc) 1.4 Ohm @ 1.85A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
IRLM220ATF
RFQ
VIEW
RFQ
1,097
In-stock
ON Semiconductor MOSFET N-CH 200V 1.13A SOT-223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2W (Tc) N-Channel - 200V 1.13A (Ta) 800 mOhm @ 570mA, 5V - 15nC @ 5V 430pF @ 25V 5V ±20V
R6009ENJTL
RFQ
VIEW
RFQ
3,931
In-stock
Rohm Semiconductor MOSFET N-CH 600V 9A LPT - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS (D2PAK) 40W (Tc) N-Channel - 600V 9A (Tc) 535 mOhm @ 2.8A, 10V 4V @ 1mA 23nC @ 10V 430pF @ 25V 10V ±20V
BSP149H6327XTSA1
RFQ
VIEW
RFQ
2,874
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V
BSP149H6906XTSA1
RFQ
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RFQ
2,831
In-stock
Infineon Technologies MOSFET N-CH 200V 660MA SOT-223 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel Depletion Mode 200V 660mA (Ta) 1.8 Ohm @ 660mA, 10V 1V @ 400µA 14nC @ 5V 430pF @ 25V 0V, 10V ±20V